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(a) Typical bipolar switching behavior of a lateral RMD (schematic inset) fabricated from implantation-synthesized tantalum oxide. (b) Column graph showing the SET and RESET voltage as a function of the SET current.
The RESET current plotted versus the SET current. The y = x line is shown as a guide.
(a) Correlation between the measured and calculated on-resistance versus the SET current. The line was calculated from RON = VRESET/ICOMP and the average from Fig. 1(b), VRESET = 0.63 V. (b) The RESET power (PRESET = VRESET 2/RON ) plotted versus the SET power (PSET = ICOMP 2RON ). The y = x line in (b) is shown as a guide.
Box plots showing the endurance (a) and memory window (b) trade-off as a function of the SET current. The bottom and top of the boxes represent the 25% and 75% range of the collected dataset, the line within the box indicates the median value, and the bars are the maximum/minimum of the dataset.
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