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Influence of the SET current on the resistive switching properties of tantalum oxide created by oxygen implantation
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10.1063/1.3701154
/content/aip/journal/apl/100/14/10.1063/1.3701154
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/14/10.1063/1.3701154
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Typical bipolar switching behavior of a lateral RMD (schematic inset) fabricated from implantation-synthesized tantalum oxide. (b) Column graph showing the SET and RESET voltage as a function of the SET current.

Image of FIG. 2.
FIG. 2.

The RESET current plotted versus the SET current. The y = x line is shown as a guide.

Image of FIG. 3.
FIG. 3.

(a) Correlation between the measured and calculated on-resistance versus the SET current. The line was calculated from RON =VRESET/ICOMP and the average from Fig. 1(b), VRESET = 0.63 V. (b) The RESET power (PRESET =VRESET 2/RON ) plotted versus the SET power (PSET =ICOMP 2RON ). The y = x line in (b) is shown as a guide.

Image of FIG. 4.
FIG. 4.

Box plots showing the endurance (a) and memory window (b) trade-off as a function of the SET current. The bottom and top of the boxes represent the 25% and 75% range of the collected dataset, the line within the box indicates the median value, and the bars are the maximum/minimum of the dataset.

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/content/aip/journal/apl/100/14/10.1063/1.3701154
2012-04-04
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of the SET current on the resistive switching properties of tantalum oxide created by oxygen implantation
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/14/10.1063/1.3701154
10.1063/1.3701154
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