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Random telegraph signal noise in gate current of unstressed and reverse-bias-stressed AlGaN/GaN high electron mobility transistors
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10.1063/1.3701164
/content/aip/journal/apl/100/14/10.1063/1.3701164
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/14/10.1063/1.3701164
/content/aip/journal/apl/100/14/10.1063/1.3701164
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/content/aip/journal/apl/100/14/10.1063/1.3701164
2012-04-03
2014-10-01
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Random telegraph signal noise in gate current of unstressed and reverse-bias-stressed AlGaN/GaN high electron mobility transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/14/10.1063/1.3701164
10.1063/1.3701164
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