Full text loading...
The XRD patterns of Bi2Te3−xSix samples with different concentrations of Si, (a) for as-deposited and (b) for annealed samples.
The XPS spectra of Bi in Bi-Te-Si samples with Si concentration of 0%, 3%, 5%, and 10%, respectively.
Partial density of states of Te(2) atoms for Bi24Te36−xSix (x = 0, 2, 3, 6). The Fermi level is set to be 0 eV.
Plots of ELF in the (110) plane of Bi24Te36−xSix (x = 0, 2, 3, 6). (a)–(d) represent the ELF of x = 0, 2, 3, and 6, respectively. The stacking sequence in each picture is B-Bi-A-A-Bi-B-Bi-A-A-Bi-B-Bi-A-A-Bi-A (A and B represent Te(1) and Te(2) sites). The color scale for the ELF value is given at the right of the figure. ELF = 0.5 represents the same level of Pauli repulsion as in the homogeneous electron gas, and higher ELF value indicates that the electrons are more localized (ELF = 1 can be interpreted as perfect localization).
Ring statistics for amorphous Bi-Te-Si structures counted per supercell.
(a) Energy difference per supercell between a-Bi-Te-Si and c-Bi-Te-Si (ΔEa−c), (b) Si in crystalline Bi24Te34Si2, and (c) Si in amorphous Bi24Te34Si2. The green, purple, and yellow balls represent Si, Bi, and Te atoms, respectively.
The different lattice parameters calculated from XRD data.
Article metrics loading...