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Amorphization and amorphous stability of Bi2Te3 chalcogenide films
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Image of FIG. 1.
FIG. 1.

The XRD patterns of Bi2Te3−xSix samples with different concentrations of Si, (a) for as-deposited and (b) for annealed samples.

Image of FIG. 2.
FIG. 2.

The XPS spectra of Bi in Bi-Te-Si samples with Si concentration of 0%, 3%, 5%, and 10%, respectively.

Image of FIG. 3.
FIG. 3.

Partial density of states of Te(2) atoms for Bi24Te36−xSix (x = 0, 2, 3, 6). The Fermi level is set to be 0 eV.

Image of FIG. 4.
FIG. 4.

Plots of ELF in the (110) plane of Bi24Te36−xSix (x = 0, 2, 3, 6). (a)–(d) represent the ELF of x = 0, 2, 3, and 6, respectively. The stacking sequence in each picture is B-Bi-A-A-Bi-B-Bi-A-A-Bi-B-Bi-A-A-Bi-A (A and B represent Te(1) and Te(2) sites). The color scale for the ELF value is given at the right of the figure. ELF = 0.5 represents the same level of Pauli repulsion as in the homogeneous electron gas, and higher ELF value indicates that the electrons are more localized (ELF = 1 can be interpreted as perfect localization).

Image of FIG. 5.
FIG. 5.

Ring statistics for amorphous Bi-Te-Si structures counted per supercell.

Image of FIG. 6.
FIG. 6.

(a) Energy difference per supercell between a-Bi-Te-Si and c-Bi-Te-Si (ΔEa−c), (b) Si in crystalline Bi24Te34Si2, and (c) Si in amorphous Bi24Te34Si2. The green, purple, and yellow balls represent Si, Bi, and Te atoms, respectively.


Generic image for table
Table I.

The different lattice parameters calculated from XRD data.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Amorphization and amorphous stability of Bi2Te3 chalcogenide films