1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Enhancement-mode nanowire (nanobelt) field-effect-transistors with Schottky-contact source and drain electrodes
Rent:
Rent this article for
USD
10.1063/1.3701276
/content/aip/journal/apl/100/14/10.1063/1.3701276
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/14/10.1063/1.3701276
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

An FESEM image (a) and a magnified FESEM image (b) of as-synthesized CdS nanowires; (c) an HRTEM image of a typical CdS NW and the corresponding SAED pattern recorded along the [-24-23].

Image of FIG. 2.
FIG. 2.

Schematic illustrations with top-view (a) and cross-sectional view (b) of as-fabricated CdS NW E-mode FET; (c) top-view FESEM image of an as-fabricated device.

Image of FIG. 3.
FIG. 3.

(a) Typical I DS-V DS curves for the CdS NW E-mode FETs with V G changing from 0.4 to 1.6 V stepped by 0.1 V. The arrow indicates the V G increasing direction; (b) corresponding I DS-V G curve with V DS = 1 V. The threshold voltage of the FET is 1 V; The inset is the drain current and the gate leakage current vs V G in the linear scale. (c) The I-V curve measured between a In/Au and an Au electrodes on a CdS NW, which exhibits a typical Schottky junction behavior.

Image of FIG. 4.
FIG. 4.

(a) The energy band diagrams of Au and CdS before contacting; the energy band diagrams of Au and CdS in the E-mode FET, which works at V G = 0 (off-state) (b), V G < 0 V (off-state) (c), and V G > V th (on-state) (d). Corresponding equivalent circuits are plotted in the respective figures.

Loading

Article metrics loading...

/content/aip/journal/apl/100/14/10.1063/1.3701276
2012-04-05
2014-04-24
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Enhancement-mode nanowire (nanobelt) field-effect-transistors with Schottky-contact source and drain electrodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/14/10.1063/1.3701276
10.1063/1.3701276
SEARCH_EXPAND_ITEM