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Tunable linear magnetoresistance in MgO magnetic tunnel junction sensors using two pinned CoFeB electrodes
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Typical TMR curves and (b) M-H loops measured along the easy axis of the bottom pinned layer after the first annealing step at 350 °C and the second annealing step at 150 °C for  = 0.1 nm. The inset of (a) shows the transverse curve in a small field range. The small cartoons show the magnetic configuration of two layers after the second anneal.

Image of FIG. 2.
FIG. 2.

(a) TMR after first and second anneal, (b) the field sensitivity and (c) linear field range as a function of Ru inserting layer thickness (). The dashed lines are guide to the eyes.

Image of FIG. 3.
FIG. 3.

(a) The magnetic field dependence of Hooge-like parameter (α) and TMR ratio for an MTJ with  = 0.3 nm. The inset shows the 1/f noise power spectral density as a function of frequency in the parallel (−300 mT) and antiparallel states (6.5 mT) after subtracting the thermal and amplifier noise. (b) α during magnetization switching of top-pinned CoFeB layer plotted against field sensitivity for different . The dashed line has unit slop and is a guide to the eye.

Image of FIG. 4.
FIG. 4.

(a) Hooge-like parameter α during magnetization switching of the top pinned layer as a function of bias voltage for different , the inset gives the normalized TMR (V) curves. (b) The bias dependence of field detectivity level both for  = 0 and 0.3 nm.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Tunable linear magnetoresistance in MgO magnetic tunnel junction sensors using two pinned CoFeB electrodes