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Interface engineering for the passivation of c-Si with O3-based atomic layer deposited AlOx for solar cell application
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10.1063/1.3701280
/content/aip/journal/apl/100/14/10.1063/1.3701280
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/14/10.1063/1.3701280
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Figures

Image of FIG. 1.
FIG. 1.

The maximum surface recombination velocity (Smax) of RT- and 350 °C-deposited AlOx passivated p-type c-Si substrates before and after post-annealing. Inset shows the Smax of ca. 30 nm-thick AlOx passivated p-type c-Si substrates in the as-deposited state as a function of deposition temperature from RT to 350 °C.

Image of FIG. 2.
FIG. 2.

(a) O/Al atomic ratios measured at the top surface of fabricated AlOx films and the atomic concentration depth profiles of (b) RT-, (c) 350 °C-, and (d) annealed RT-deposited AlOx films. The vertical dotted lines represent the position of the c-Si interface.

Image of FIG. 3.
FIG. 3.

Si 2p photoelectron spectra and cross-sectional HRTEM images for (a), (b) RT-, (c), (d) 350 °C-, and (e), (f) annealed RT-deposited AlOx films, respectively. Si 2p photoelectron spectra were taken after 1800, 2400, and 1475 s Ar+-ion sputtering for RT-, 350 °C-, and annealed RT-deposited films, respectively.

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/content/aip/journal/apl/100/14/10.1063/1.3701280
2012-04-05
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Interface engineering for the passivation of c-Si with O3-based atomic layer deposited AlOx for solar cell application
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/14/10.1063/1.3701280
10.1063/1.3701280
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