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Aluminum oxide as passivation and gate insulator in GaAs-based field-effect transistors prepared in situ by metal-organic vapor deposition
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10.1063/1.3701584
/content/aip/journal/apl/100/14/10.1063/1.3701584
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/14/10.1063/1.3701584
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic cross-section of the MOS layer structure.

Image of FIG. 2.
FIG. 2.

Typical output (left) and transfer (right) characteristics of Al-ox/AlGaAs/InGaAs/GaAs MOSHFET in comparison with HFET counterpart.

Image of FIG. 3.
FIG. 3.

C−V characteristics of Al-ox/AlGaAs/InGaAs/GaAs MOSHFET (full marks) and HFET counterpart (open marks) measured at 1 kHz and 1 MHz.

Image of FIG. 4.
FIG. 4.

Capacitance vs frequency for Al-ox/AlGaAs/InGaAs/GaAs MOSHFET (full marks) and HFET counterpart (open marks). Note that the gate voltage was chosen to be in the depletion region.

Image of FIG. 5.
FIG. 5.

Carrier mobility vs sheet charge density for Al-ox/AlGaAs/InGaAs/GaAs MOSHFET (full marks) and HFET counterpart (open marks).

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/content/aip/journal/apl/100/14/10.1063/1.3701584
2012-04-05
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Aluminum oxide as passivation and gate insulator in GaAs-based field-effect transistors prepared in situ by metal-organic vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/14/10.1063/1.3701584
10.1063/1.3701584
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