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Aluminum oxide as passivation and gate insulator in GaAs-based field-effect transistors prepared in situ by metal-organic vapor deposition
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10.1063/1.3701584
/content/aip/journal/apl/100/14/10.1063/1.3701584
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/14/10.1063/1.3701584
/content/aip/journal/apl/100/14/10.1063/1.3701584
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/content/aip/journal/apl/100/14/10.1063/1.3701584
2012-04-05
2014-10-31
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Aluminum oxide as passivation and gate insulator in GaAs-based field-effect transistors prepared in situ by metal-organic vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/14/10.1063/1.3701584
10.1063/1.3701584
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