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(a) Schematic AlN/GaN resonant tunneling diode design. (b) Layer compositions within the active region of the device. (c) Band diagram of the device including three quasi-bound states within the GaN quantum well in the conduction band.
Results of device modeling. (a) Simulated transmittance as a function of electron energy for non-polar, Ga-polar, and N-polar AlN/GaN resonant tunneling diodes. (b) Simulated peak-to-valley current ratio as a function of barrier composition.
(a) Cross-section and (b) plan view scanning electron microscopy images of an as grown nanowire sample. Z-contrast STEM images of nanowire resonant tunneling diodes (c) with a thin outer shell and (d) a thick outer shell. Scale bars correspond to 100 nm. (e) Z-contrast atomic resolution STEM image of the device active region.
Contact design for measuring the current-voltage characteristics of (a) an ensemble of nanowires and (b) using a nanoprobe to contact a small number of wires (arrows show the position of probes). (c) Room temperature I-V using the scheme shown in (a) (Inset shows I-V in log scale). (d) I-V of an ensemble of nanowires at cryogenic temperatures with room temperature measurements included as reference. (e) Experimentally measured J-V of a single nanowire and two simultaneously contacted nanowires showing NDR. A simulated J-V of a single nanowire (plotted as grey line) is included to compare with experimental results.
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