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GaSb/GaAs quantum dot formation and demolition studied with cross-sectional scanning tunneling microscopy
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10.1063/1.3701614
/content/aip/journal/apl/100/14/10.1063/1.3701614
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/14/10.1063/1.3701614
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Filled state X-STM images of various observed GaSb/GaAs nanostructures. Typical examples of (a) a dot, (b) a centrally cleaved ring, and (c) a cluster. The growth direction is indicated by the arrow.

Image of FIG. 2.
FIG. 2.

Filled state X-STM images of (a) a dot with a screw dislocation on top, (b) a magnified portion of the dislocation revealing the termination at the top and the phase mismatch of the atomic rows at the dislocation boundary, and (c) a cluster with multiple segments of GaSb.

Image of FIG. 3.
FIG. 3.

Relative occurrence of dots (blue), rings (green), and clusters (red) grown with a range of growth conditions. The observed amounts of each type are indicated in the figure. (a) Various GaAs first cap thicknesses, where first and second cap temperatures always were 430 and 530 °C, respectively. (b) Various GaAs second cap temperatures, where the first cap thickness always was ≥8 nm.

Image of FIG. 4.
FIG. 4.

Nanostructure width distributions (histograms) and Gaussian fits (lines) of dots (blue), rings (green), and clusters (red). Dashed lines indicate the middle of the distributions. Rings are on average about 20% wider than dots and clusters.

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/content/aip/journal/apl/100/14/10.1063/1.3701614
2012-04-06
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: GaSb/GaAs quantum dot formation and demolition studied with cross-sectional scanning tunneling microscopy
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/14/10.1063/1.3701614
10.1063/1.3701614
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