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Filled state X-STM images of various observed GaSb/GaAs nanostructures. Typical examples of (a) a dot, (b) a centrally cleaved ring, and (c) a cluster. The growth direction is indicated by the arrow.
Filled state X-STM images of (a) a dot with a screw dislocation on top, (b) a magnified portion of the dislocation revealing the termination at the top and the phase mismatch of the atomic rows at the dislocation boundary, and (c) a cluster with multiple segments of GaSb.
Relative occurrence of dots (blue), rings (green), and clusters (red) grown with a range of growth conditions. The observed amounts of each type are indicated in the figure. (a) Various GaAs first cap thicknesses, where first and second cap temperatures always were 430 and 530 °C, respectively. (b) Various GaAs second cap temperatures, where the first cap thickness always was ≥8 nm.
Nanostructure width distributions (histograms) and Gaussian fits (lines) of dots (blue), rings (green), and clusters (red). Dashed lines indicate the middle of the distributions. Rings are on average about 20% wider than dots and clusters.
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