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Effect of molecular p-doping on hole density and mobility in poly(3-hexylthiophene)
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1.
1. A. Yamamori, C. Adachi, T. Koyama, and Y. Taniguchi, Appl. Phys. Lett. 72, 2147 (1998).
http://dx.doi.org/10.1063/1.121304
2.
2. J. Blochwitz, M. Pfeiffer, T. Fritz, and K. Leo, Appl. Phys. Lett. 73, 729 (1998).
http://dx.doi.org/10.1063/1.121982
3.
3. E. Lim, B. J. Jung, M. Chikamatsu, R. Azumi, Y. Yoshida, K. Yase, L. M. Do, and H. K. Shim, J. Mater. Chem. 17, 1416 (2007).
http://dx.doi.org/10.1039/b615720c
4.
4. L. Ma, W. H. Lee, Y. D. Park, J. S. Kim, H. S. Lee, and K. Choa, Appl. Phys. Lett. 92, 063310 (2008).
http://dx.doi.org/10.1063/1.2883927
5.
5. J. Sun, B. J. Jung, T. Lee, L. Berger, J. Huang, Y. Liu, D. H. Reich, and H. E. Katz, ACS Appl. Mater. Interfaces 1, 412 (2009).
http://dx.doi.org/10.1021/am8001132
6.
6. C. P. Jarrett, R. H. Friend, A. R. Brown, and D. M. de Leeuw, J. Appl. Phys. 77, 6289 (1995).
http://dx.doi.org/10.1063/1.359096
7.
7. K. H. Yim, G. L. Whiting, C. E. Murphy, J. J. M. Halls, J. H. Burroughes, R. H. Friend, and J. S. Kim, Adv. Mater. 20, 3319 (2008).
http://dx.doi.org/10.1002/adma.200800735
8.
8. Y. Zhang, B. de Boer, and P. W. M. Blom, Adv. Funct. Mater. 19, 1901 (2009).
http://dx.doi.org/10.1002/adfm.200801761
9.
9. Y. A. Zhang and P. W. M. Blom, Org. Electron. 11, 1261 (2010).
http://dx.doi.org/10.1016/j.orgel.2010.03.012
10.
10. P. Pingel, L. Y. Zhu, K. S. Park, J. O. Vogel, S. Janietz, E. G. Kim, J. P. Rabe, J. L. Brédas, and N. Koch, J. Phys. Chem. Lett. 1, 2037 (2010).
http://dx.doi.org/10.1021/jz100492c
11.
11. E. F. Aziz, A. Vollmer, S. Eisebitt, W. Eberhardt, P. Pingel, D. Neher, and N. Koch, Adv. Mater. 19, 3257 (2007).
http://dx.doi.org/10.1002/adma.200700926
12.
12. I. Salzmann, G. Heimel, S. Duhm, M. Oehzelt, P. Pingel, B. M. George, A. Schnegg, K. Lips, R.-P. Blum, A. Vollmer, and N. Koch, Phys. Rev. Lett. 108, 035502 (2012).
http://dx.doi.org/10.1103/PhysRevLett.108.035502
13.
13. L. Zhu, E.-G. Kim, Y. P. Yi, and J. L. Brédas, Chem. Mater. 23, 5149 (2011).
http://dx.doi.org/10.1021/cm201798x
14.
14. V. I. Arkhipov, P. Heremans, E. V. Emelianova, and H. Bässler, Phys. Rev. B 71, 045214 (2005).
http://dx.doi.org/10.1103/PhysRevB.71.045214
15.
15. V. I. Arkhipov, E. V. Emelianova, P. Heremans, and H. Bässler, Phys. Rev. B 72, 235202 (2005).
http://dx.doi.org/10.1103/PhysRevB.72.235202
16.
16.See supplementary material at http://dx.doi.org/10.1063/1.3701729 for details on the experimental procedures and admittance data. [Supplementary Material]
17.
17. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1982).
18.
18. Y. Zhang and P. W. M. Blom, Appl. Phys. Lett. 97, 083303 (2010).
http://dx.doi.org/10.1063/1.3464560
19.
19. T. J. Prosa, M. J. Winokur, J. Moulton, P. Smith, and A. J. Heeger, Macromolecules 25, 4364 (1992).
http://dx.doi.org/10.1021/ma00043a019
20.
20. X. Jiang, Y. Harima, K. Yamashita, Y. Tada, J. Ohshita, and A. Kunai, Chem. Phys. Lett. 364, 616 (2002).
http://dx.doi.org/10.1016/S0009-2614(02)01383-0
21.
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/content/aip/journal/apl/100/14/10.1063/1.3701729
2012-04-06
2014-09-02

Abstract

Employing impedance spectroscopy, we have studied the hole density, conductivity, and mobility of poly(3-hexylthiophene), P3HT, doped with the strong molecular acceptor tetrafluorotetracyanoquinodimethane, F4TCNQ. We find that the hole density increases linearly with the F4TCNQ concentration. Furthermore, the hole mobility is decreased upon doping at low-to-medium doping level, which is rationalized by an analytic model of carrier mobility in doped organic semiconductors [V. I. Arkhipov, E. V. Emelianova, P. Heremans, and H. Bässler, Phys. Rev. B 72, 235202 (2005)]. We infer that the presence of ionized F4TCNQ molecules in the P3HT layer increases energetic disorder, which diminishes the carrier mobility.

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Scitation: Effect of molecular p-doping on hole density and mobility in poly(3-hexylthiophene)
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/14/10.1063/1.3701729
10.1063/1.3701729
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