1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Charge trapping induced drain-induced-barrier-lowering in HfO2/TiN p-channel metal-oxide-semiconductor-field-effect-transistors under hot carrier stress
Rent:
Rent this article for
USD
10.1063/1.3697644
/content/aip/journal/apl/100/15/10.1063/1.3697644
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/15/10.1063/1.3697644
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

ID-VG and corresponding Gm-VG transfer characteristic curves of HfO2/TiN p-MOSFETs before and after stress. The inset shows the comparison of subthreshold slope in log ID-VG under CHCS and the energy diagram of CHC-induced trapping.

Image of FIG. 2.
FIG. 2.

(a) ID-VG and corresponding IB-VG transfer characteristic curves under VD = −2.4 V as a function of stress time during CHCS for devices. The inset shows the energy diagram of GIDL behavior under CHCS. (b) Normalized CGD-VG curve before and after CHCS and its measurement method. The inset shows Normalized CGS-VG curve before and after CHCS and its measurement method.

Image of FIG. 3.
FIG. 3.

The CHCS-induced Lin-Vth and Sat-Vth shift for HfO2/TiN p-MOSFETs with L = 1 μm. The inset shows the trapping-induced DIBL mechanism due to CHC-induced electron-trapping under linear and saturation region.

Image of FIG. 4.
FIG. 4.

The relation of Lin-Vth shift versus channel length for HfO2/TiN p-MOSFETs under CHCS. The inset shows the Lin-Vth shift versus stress time for HfO2/TiN p-MOSFETs with L = 1 μm, 2 μm and 10 μm under CHCS and the illustration of trapping-induced DIBL behavior for long channel devices.

Loading

Article metrics loading...

/content/aip/journal/apl/100/15/10.1063/1.3697644
2012-04-09
2014-04-20
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Charge trapping induced drain-induced-barrier-lowering in HfO2/TiN p-channel metal-oxide-semiconductor-field-effect-transistors under hot carrier stress
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/15/10.1063/1.3697644
10.1063/1.3697644
SEARCH_EXPAND_ITEM