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Charge trapping induced drain-induced-barrier-lowering in HfO2/TiN p-channel metal-oxide-semiconductor-field-effect-transistors under hot carrier stress
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10.1063/1.3697644
/content/aip/journal/apl/100/15/10.1063/1.3697644
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/15/10.1063/1.3697644
/content/aip/journal/apl/100/15/10.1063/1.3697644
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/content/aip/journal/apl/100/15/10.1063/1.3697644
2012-04-09
2014-11-01
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Charge trapping induced drain-induced-barrier-lowering in HfO2/TiN p-channel metal-oxide-semiconductor-field-effect-transistors under hot carrier stress
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/15/10.1063/1.3697644
10.1063/1.3697644
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