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ID-VG and corresponding Gm-VG transfer characteristic curves of HfO2/TiN p-MOSFETs before and after stress. The inset shows the comparison of subthreshold slope in log ID-VG under CHCS and the energy diagram of CHC-induced trapping.
(a) ID-VG and corresponding IB-VG transfer characteristic curves under VD = −2.4 V as a function of stress time during CHCS for devices. The inset shows the energy diagram of GIDL behavior under CHCS. (b) Normalized CGD-VG curve before and after CHCS and its measurement method. The inset shows Normalized CGS-VG curve before and after CHCS and its measurement method.
The CHCS-induced Lin-Vth and Sat-Vth shift for HfO2/TiN p-MOSFETs with L = 1 μm. The inset shows the trapping-induced DIBL mechanism due to CHC-induced electron-trapping under linear and saturation region.
The relation of Lin-Vth shift versus channel length for HfO2/TiN p-MOSFETs under CHCS. The inset shows the Lin-Vth shift versus stress time for HfO2/TiN p-MOSFETs with L = 1 μm, 2 μm and 10 μm under CHCS and the illustration of trapping-induced DIBL behavior for long channel devices.
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