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Gate-last TiN/HfO2 band edge effective work functions using low-temperature anneals and selective cladding to control interface composition
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10.1063/1.3701165
/content/aip/journal/apl/100/15/10.1063/1.3701165
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/15/10.1063/1.3701165
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Figures

Image of FIG. 1.
FIG. 1.

Id-Vg of 1.1 nm EOT HfO2/TiN PMOS and NMOS FETs with various low-temperature anneals and selective metal cladding layers. Employing a 450 °C 10% O2/N2 post-TiN anneal with a W-cladding layer allows for a PMOS Vt = −0.20 V. Using Al-cladding with no post-TiN anneal gives an NMOS Vt = 0.08 V.

Image of FIG. 2.
FIG. 2.

Flatband voltage (Vfb) vs. EOT plots for the HfO2/TiN gate stacks with different post-TiN anneals and cladding layers. The left axis displays the extracted EWF for each set of devices.

Image of FIG. 3.
FIG. 3.

Backside DSIMS data of metal cladding concentration. During FGA, the Al-cladding diffuses through the unoxidized TiN, reaching the HfO2/TiN interface setting a low NMOS EWF. The Al migration is significantly suppressed through oxidized TiN. The W-cladding does not migrate to the HfO2/TiN interface.

Image of FIG. 4.
FIG. 4.

TiN/SiO2 gate stacks exhibit EWF shifts of ∼400 meV after 450 °C O2/N2 anneal. This suggests that the filling of O-vacancies in HfO2 is not adequate by itself to explain the EWF shift.

Image of FIG. 5.
FIG. 5.

Backside DSIMS data showing N displacement from the TiN to the HfO2/TiN interface and slightly into the HfO2 following the 450 °C 10% O2/N2 post-TiN anneal. The insets emphasize that the HfO2/TiN interfacial edge, defined by the O and Ti concentrations, overlaps for both samples, indicating that the difference in N concentration near that interface is indeed evidence of N displacement.

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/content/aip/journal/apl/100/15/10.1063/1.3701165
2012-04-09
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Gate-last TiN/HfO2 band edge effective work functions using low-temperature anneals and selective cladding to control interface composition
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/15/10.1063/1.3701165
10.1063/1.3701165
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