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(a) Schematics of the patterning process of SiC(0001). Nano-holes are created on the SiC(0001) surface through a porous alumina mask. The wafer is then etched in hydrogen to form regular nano-holes of hexagonal shape. (b) SEM image of the patterned SiC(0001) wafer after hydrogen etching showing regular hexagonal holes with well defined facets.
(a) Large scale STM image of one nano-hole in the graphenized SiC(0001) wafer. The left inset shows the Fourier transform of the area in the dotted box. It displays a sixfold pattern caused by the mono-domain (1 × 1) structure of the few layer graphene. The right inset shows a low pass filtered image of the structure at the bottom of the hexagonal hole and reveals a (6 × 6) superstructure of the few layer graphene film. (b) Line section of the hole (c-j) show STM images of higher resolution at places indicated in (a). The (1 × 1) structure is clearly visible showing no dislocations or small angle domain boundaries even in the corner of the holes (j).
Calculated electron propagation through strained graphene lenses. All three lenses have the same outer diameter of 200 nm with varying depth as indicated in the figure. The side facets are inlined by 5, 6 and 7° for the holes of 2.5, 6, and 10 nm depth, respectively.
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