Full text loading...
(a) Representative Raman spectra of monolayer graphene used for device fabrication. Raman spectra were taken with a 442 nm blue laser at three locations of the synthesized graphene on evaporated Cu film directly before transfer. (b) 3D AFM image of cured polyimide surface with surface roughness <1 nm.
(a) Illustration of the EGFET fabrication process on spin-coated PI on a Si3N4/Si substrate. (b) Optical image of a completed EGFET. The device length and width are 4 and 8 μm, respectively. (c) Photograph of the flexible substrate with an array of EGFETs. The highlighted square shows the array of devices.
AFM images of monolayer graphene after device fabrication. (a) 20 μm × 20 μm scan, and (b) 3D image of the scanned area. The surface roughness of the highlighted rectangle is 1.9 nm.
Experimental current–voltage characteristics of the EGFET. (a) ID-VG profile with extracted electron and hole mobilities of 4930 cm2/V s and 1130 cm2/V s, respectively. VD = 100 mV. (b) ID-VD curves showing linear relation.
Temperature-dependent device characteristics. (a) ID-VG response. The initial and final measurements at 300 K are identical indicating reliability of the measurements. (b) Charge impurity density, (c) mobility normalized to the 300 K value (μo), and (d) contact resistance dependence on temperature. The contact resistance reported here is the total contribution from the source and drain contacts. μo is the reference mobility at 300 K.
Article metrics loading...