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Embedded-gate graphene transistors for high-mobility detachable flexible nanoelectronics
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10.1063/1.3702570
/content/aip/journal/apl/100/15/10.1063/1.3702570
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/15/10.1063/1.3702570
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Figures

Image of FIG. 1.
FIG. 1.

(a) Representative Raman spectra of monolayer graphene used for device fabrication. Raman spectra were taken with a 442 nm blue laser at three locations of the synthesized graphene on evaporated Cu film directly before transfer. (b) 3D AFM image of cured polyimide surface with surface roughness <1 nm.

Image of FIG. 2.
FIG. 2.

(a) Illustration of the EGFET fabrication process on spin-coated PI on a Si3N4/Si substrate. (b) Optical image of a completed EGFET. The device length and width are 4 and 8 μm, respectively. (c) Photograph of the flexible substrate with an array of EGFETs. The highlighted square shows the array of devices.

Image of FIG. 3.
FIG. 3.

AFM images of monolayer graphene after device fabrication. (a) 20 μm × 20 μm scan, and (b) 3D image of the scanned area. The surface roughness of the highlighted rectangle is 1.9 nm.

Image of FIG. 4.
FIG. 4.

Experimental current–voltage characteristics of the EGFET. (a) ID-VG profile with extracted electron and hole mobilities of 4930 cm2/V s and 1130 cm2/V s, respectively. VD = 100 mV. (b) ID-VD curves showing linear relation.

Image of FIG. 5.
FIG. 5.

Temperature-dependent device characteristics. (a) ID-VG response. The initial and final measurements at 300 K are identical indicating reliability of the measurements. (b) Charge impurity density, (c) mobility normalized to the 300 K value (μo), and (d) contact resistance dependence on temperature. The contact resistance reported here is the total contribution from the source and drain contacts. μo is the reference mobility at 300 K.

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/content/aip/journal/apl/100/15/10.1063/1.3702570
2012-04-10
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Embedded-gate graphene transistors for high-mobility detachable flexible nanoelectronics
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/15/10.1063/1.3702570
10.1063/1.3702570
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