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Structural properties of InN films grown on O-face ZnO by plasma-assisted molecular beam epitaxy
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View: Figures


Image of FIG. 1.
FIG. 1.

RHEED patterns [(a)–(c)], AFM [(d)–(f)], and TEM [(g)–(i)] micrographs of thin InN films grown at different , namely, 350 °C for the images in the left column [(a), (d), and (g)], 450 °C for those in the center column [(b), (e), and (h)], and 550 °C for those in the right column [(c) and (f)] with the exception of the sample in (i) which was grown at 600 °C. All RHEED patterns were taken along the azimuth after growth. The inset in (f) shows a bird’s eye view SEM micrograph of the surface of the sample. The arrow indicates a hexagonal pit. The white box in (g) draws attention to the presence of cubic InN clearly seen in the magnified inset. The white arrows in (g)–(i) highlight the interface between InN and ZnO.

Image of FIG. 2.
FIG. 2.

FWHM of the XRD scans across the (0002) reflection for thin InN films grown at different . The line is a guide to the eye. The inset shows a symmetric XRD - 2 scan of an InN film grown at 600 °C.

Image of FIG. 3.
FIG. 3.

XRD scans across the (0002) and reflections for a 1.85 m thick InN film grown at 475 °C. The grey squares display the experimental data, and the solid lines a fit using the model described in the text. The right inset shows a plan-view TEM micrograph of this sample. The red circles highlight threading dislocations. The arrow indicates the diffraction vector used for imaging the dislocations. The left inset shows the evolution of the FWHM of the scans with the thickness of films grown at 475 °C. The dashed line is a guide to the eye.

Image of FIG. 4.
FIG. 4.

Raman spectrum of a 1.85 m-thick InN film grown at 475 °C recorded at 300 K and with excitation at 482.5 nm.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Structural properties of InN films grown on O-face ZnO(0001¯) by plasma-assisted molecular beam epitaxy