Full text loading...
Diagram illustrating coincident site lattice matching condition for the epitaxial growth of a (0001) wurtzite InGaN alloy crystal on a (111) face centered cubic substrate surface. (a) No lattice rotation, 1-10 fcc//11-20 wz; (b) after 30° lattice rotation, 1-10 fcc//10-10 wz.
Transmission electron diffraction patterns: (a) calculated pattern for a bicrystal of (0001) InGaN grown coincident site lattice matched on (111) MgAl2O4 spinel viewed along the [1-10] spinel direction; (b) experimental pattern obtained from interface of InGaN grown on (111) spinel showing the predicted epitaxial alignment.
High resolution TEM image of the abrupt but stepped InGaN/spinel interface.
SEM EBSD orientation map of plan-view sample, and inset pole figures, showing the presence of two sets of orientation domains of (0001) InGaN rotated 30° with respect to each other.
Room temperature PL spectra obtained from the same InGaN sample as Figs. 2–4 showing luminescence centered at ∼550 nm, i.e., in the center of the “green gap.”
Article metrics loading...