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Coincident site lattice-matched InGaN on (111) spinel substrates
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View: Figures


Image of FIG. 1.
FIG. 1.

Diagram illustrating coincident site lattice matching condition for the epitaxial growth of a (0001) wurtzite InGaN alloy crystal on a (111) face centered cubic substrate surface. (a) No lattice rotation, 1-10 fcc//11-20 wz; (b) after 30° lattice rotation, 1-10 fcc//10-10 wz.

Image of FIG. 2.
FIG. 2.

Transmission electron diffraction patterns: (a) calculated pattern for a bicrystal of (0001) InGaN grown coincident site lattice matched on (111) MgAl2O4 spinel viewed along the [1-10] spinel direction; (b) experimental pattern obtained from interface of InGaN grown on (111) spinel showing the predicted epitaxial alignment.

Image of FIG. 3.
FIG. 3.

High resolution TEM image of the abrupt but stepped InGaN/spinel interface.

Image of FIG. 4.
FIG. 4.

SEM EBSD orientation map of plan-view sample, and inset pole figures, showing the presence of two sets of orientation domains of (0001) InGaN rotated 30° with respect to each other.

Image of FIG. 5.
FIG. 5.

Room temperature PL spectra obtained from the same InGaN sample as Figs. 2–4 showing luminescence centered at ∼550 nm, i.e., in the center of the “green gap.”


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Coincident site lattice-matched InGaN on (111) spinel substrates