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SEM images of an H-shaped structure milled in a bilayered Pd80Si20 (200 nm)/SiO2 (500 nm)/Si sample: (a) before irradiation, (b) after irradiation with 1 × 1016 ions/cm2 at RT, (c) same as in (b) but after etching in HF for 4 min, (d) after etching and an additional irradiation with 1 × 1016 ions/cm2 at ∼80 K. The original FIB milled depth and gap size are ∼1.1 μm and ∼800 nm, respectively. The sketch at the top is a schematic cross section of the sample.
Comparison of width change of each gap of SiO2 and Pd80Si20 in the bilayered structure as a function of ion fluence for irradiations at RT and at 80 K. The line is a guide for the eyes.
(a) Schematic diagram of the two electrodes. SEM images of the electrodes: (b) before irradiation and (c) after irradiation with 5.65×1015 ions/cm2 at RT.
Fluence dependence of the I-V characteristics at RT. The I-V curve measured after irradiation with 5.65 × 1015 ions/cm2 is shown in a different horizontal scale. Dashed lines are obtained by a least-squares fit to Eq. (1). The best-fit gap distance corresponding to each I-V curve is as follows: ♦ 0.006 nm, ⋄ 1.8 nm, ▾ 3.0 nm, ▿ 4.2 nm, ▪ 5.4 nm, □ 6.5 nm, ▴ 8.3 nm, and ▵ 8.5 nm.
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