banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Identification of a paramagnetic recombination center in silicon/silicon-dioxide interface
Rent this article for


Image of FIG. 1.
FIG. 1.

SDR-EPR spectra for natSi and 28Si samples recorded at 16 K with B||[111]. The samples were measured after native oxide formation at room temperature in air for 17 days.

Image of FIG. 2.
FIG. 2.

Angular dependences of the g-factors of SDR-EPR spectra detected in 28Si sample rotated around crystal axis. The experimental points (•) are compared with calculation based on previously reported spin Hamiltonian parameters for phosphorus (dotted line)27 and Pb (broken curves).12 The dashed line and the solid curves are calculated g-factor components for I (g = 1.9996(2)) and Pm, respectively.

Image of FIG. 3.
FIG. 3.

Time dependences of the SDR-EPR signal intensities detected in the sample kept at room temperature in air after termination of the sample surface by hydrogens. The measurement was performed at T = 16 K with B||[111]. The signal intensities of Pm (•) and Pb (▴) were normalized by the maximum intensities at 8 days and 10 days for Pm and Pb, respectively.

Image of FIG. 4.
FIG. 4.

SDR-EPR spectra of 28Si samples with native and thermal oxide films. The measurements were performed at 16 K with B||[111].


Generic image for table
Table I.

Linewidths of the SDR-EPR signals.


Article metrics loading...


Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Identification of a paramagnetic recombination center in silicon/silicon-dioxide interface