1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Reliability improvement of InGaZnO thin film transistors encapsulated under nitrogen ambient
Rent:
Rent this article for
USD
10.1063/1.3702794
/content/aip/journal/apl/100/15/10.1063/1.3702794
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/15/10.1063/1.3702794
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The photograph of the NAE a-IGZO TFTs. The dotted lines indicate the covered glass substrate that was used to isolate the interference of environment atmosphere.

Image of FIG. 2.
FIG. 2.

The transfer characteristics of (a) NAE a-IGZO TFTs and (b) bare ones during PGBS of VG = 30 V and VDS = 0 V for 1500 s. The inset showed the corresponding cross-sectional diagrams. (c) Stress time dependence of Vth shift for the NAE TFTs and bare ones. The inset showed the SS variation with the stress time for both devices.

Image of FIG. 3.
FIG. 3.

(a) The schematic plot of bare a-IGZO TFTs during PGBS of VG = 30 V and VDS = 0 V. (b) The band diagram of bare a-IGZO TFTs after PGBS. (c) The schematic plot of NAE a-IGZO TFTs during PGBS of VG = 30 V and VDS = 0 V. (d) The band diagram of NAE a-IGZO TFTs after PGBS.

Image of FIG. 4.
FIG. 4.

The output characteristics of (a) NAE a-IGZO TFTs and (b) bare ones after PGBS of VG = 30 V and VDS = 0 V for 1500 s.

Loading

Article metrics loading...

/content/aip/journal/apl/100/15/10.1063/1.3702794
2012-04-11
2014-04-21
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Reliability improvement of InGaZnO thin film transistors encapsulated under nitrogen ambient
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/15/10.1063/1.3702794
10.1063/1.3702794
SEARCH_EXPAND_ITEM