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(a) A SEM image of GaN nanowires; (b) TEM image of GaN nanowires with an alloy globule at the end. Inset is the selected area electron diffraction patterns. (c) High-resolution TEM image of a GaN nanowire. (d) Typical I-V curve from GaN nanowire devices at 300 K. Inset shows an SEM image of a GaN device.
EBIC signal at 5 K as a function of the distance from the left metal contact along the nanowire direction. An exponential fitting curve is also included in the figure. An SEM picture of a device and a schematic diagram to explain the EBIC set-up are shown in the inset.
The CL spectra from an individual GaN nanowire at 5 K, showing a local variation of the CL intensity. Near-bandedge emission is at 3.55 eV, blueshifted from the bulk GaN.
Spatial variation of the CL spectra at 5 K from GaN nanowires jointly grew together, which demonstrates that the blueshift is not due to the quantum confinement effect.
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