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Bolometric response in graphene based superconducting tunnel junctions
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10.1063/1.3703117
/content/aip/journal/apl/100/15/10.1063/1.3703117
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/15/10.1063/1.3703117
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Figures

Image of FIG. 1.
FIG. 1.

(a) Calculated electron heat capacity and its temperature- and Vg-dependence. The electron heat capacity generally follows linear temperature dependence, except at the Dirac point where (however, this is difficult to be observed experimentally since it only happens almost strictly at Dirac point). At low temperatures where thermal carrier excitation is negligible, the electron heat capacity depends linearly on Fermi energy, hence . At higher temperatures, the thermal carrier excitation smears out such linear dependence. (b) Circuit model for graphene STJ devices, based on which the power absorption in graphene can be estimated from the measured RF voltage/power on the 50 Ω resistor.

Image of FIG. 2.
FIG. 2.

(a) Temperature dependence of the differential resistance vs. bias voltage curves, taken in absence of applied RF power, at (from top to bottom) 150, 250, 350, 450, 550, 700, and 950 mK. (b) RF power (at 0.6 GHz) dependence of the differential resistance vs. bias voltage curves taken at 160 mK. The inset shows the simulated RF response induced by non-linear IV characteristics, in absence of heating. (c) Comparison between the bias dependence of differential resistance for 160 mK/−70 dBm and 500 mK/no-RF. The two conditions yield almost identical results. (d) Comparison between the bias dependence of differential resistance for 160 mK/−60 dBm and 925 mK/no-RF. The broader peak feature measured at 160 mK/−60 dBm compared to that at 925 mK/no-RF is a result of the reduced superconducting gap of the electrodes at higher bath temperature.

Image of FIG. 3.
FIG. 3.

(a) Temperature increase due to RF heating as a function of RF power. (b) Temperature dependence of thermal conductance in the graphene STJ device. (c) Temperature dependence of NEP. (d) RF power dependence of responsivity.

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/content/aip/journal/apl/100/15/10.1063/1.3703117
2012-04-12
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Bolometric response in graphene based superconducting tunnel junctions
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/15/10.1063/1.3703117
10.1063/1.3703117
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