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(a) General sample structure. (b) The plot showing gradient of In-Ga exchange in the MBL (red trace); InP buffer marked with blue trace for indication only. Dashed curve shows a full parabolic shape, part of which was selected as initial MBL curve design. (c) TEM image in cross-section geometry of one of the realizations, showing defects distribution in MBL without their propagation into the cap.
Morphology of sample surface grown in optimized growth conditions on perfectly oriented substrate; (a) N-DIC image, AFM images: (b) signal amplitude and (c) 3D surface reconstruction.
(a) and (b) Reflectivity traces in respect to growth time for sample grown with (a) and without (b) Sb support. Morphologies of respective surfaces (AFM signal amplitudes) are shown on (c) and (d). Sample grown with Sb (image c) had RMS of 7 nm, without Sb (d) RMS = 33 nm with holes depth exceeding 200 nm, depth beyond standard AFM scanning abilities.
(a) Sketch showing cleaved wafer piece used as a growth substrate, with defected part marked M and m stand, respectively, for the major and minor flats of the 2˝ wafer in european/japanese flat option. The wafer was (100) with offcut 0.4° toward B; (b) AFM image (signal amplitude) of defected parts of the wafer, (c) dark field image of the defect center, and (d) AFM image (signal amplitude) of the defect center.
Morphology and HRXRD RSMs of MBL grown simultaneously on (100) wafers with 0.4° toward A (left panel) and B (right panel) crystallographic directions. (a) and (b) show AFM images (signal amplitudes). RSMs (plotted in direct space) show the results of scanning in (004) reflection in 0° ((c) and (d)) and 90° ((e) and (f)) sample positions in respect to beam incidence.
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