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The integration of high-k dielectric on two-dimensional crystals by atomic layer deposition
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1.
1. K. Mistry, C. Allen, C. Auth, B. Beattie, D. Bergstrom, M. Bost, M. Brazier, M. Buehler, A. Cappellani, R. Chau, C.-H. Choi, G. Ding, K. Fischer, T. Ghani, R. Grover, W. Han, D. Hanken, M. Hattendorf, J. He, J. Hicks, R. Heussner, D. Ingerly, P. Jain, R. James, L. Jong, S. Joshi, C. Kenyon, K. Kuhn, K. Lee, H. Liu, J. Maiz, B. McIntyre, P. Moon, J. Neirynck, S. Pae, C. Parker, D. Parsons, C. Prasad, L. Pipes, M. Prince, P. Ranade, T. Reynolds, J. Sandford, L. Shifren, J. Sebastian, J. Seiple, D. Simon, S. Sivakumar, P. Smith, C. Thomas, T. Troeger, P. Vandervoorn, S. Williams, and K. Zawadzki, Tech. Dig. - Int. Electron Devices Meet. 2007, 247.
2.
2. C. O. Chui, S. Ramanathan, B. B. Triplett, P. C. McIntyre, and K. C. Saraswat, IEEE Electron Devices Lett. 23, 473 (2008).
http://dx.doi.org/10.1109/LED.2002.801319
3.
3. Y. Xuan, Y. Q. Wu, and P. D. Ye, IEEE Electron Devices Lett. 29, 294 (2008).
http://dx.doi.org/10.1109/LED.2008.917817
4.
4. A. Nainani, T. Irisawa, Z. Yuan, Y. Sun, T. Krishnamohan, M. Reason, B. R. Bennett, J. B. Boos, M. G. Ancona, Y. Nishi, K. C. Saraswat, Tech. Dig. - Int. Electron Devices Meet. 2010, 138.
5.
5. M. Xu, R. Wang, and P. D. Ye, IEEE Electron Devices Lett. 32, 488 (2011).
http://dx.doi.org/10.1109/LED.2011.2106107
6.
6. K. S. Novoselov, D. Jiang, F. Schedin, T. J. Booth, V. V. Khotkevich, S. V. Morozov, and A. K. Geim, Proc. Natl. Acad. Sci. U.S.A. 102, 10451 (2005).
http://dx.doi.org/10.1073/pnas.0502848102
7.
7. K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, M. I. Katsnelson, I. V. Grigorieva, S. V. Dubonos, and A. A. Firsov, Nature 438, 197 (2005).
http://dx.doi.org/10.1038/nature04233
8.
8. Y. Zhang, J. W. Tan, H. L. Stormer, and P. Kim, Nature 438, 201 (2005).
http://dx.doi.org/10.1038/nature04235
9.
9. C. Jin, F. Lin, K. Suenaga, and S. Iijima, Phys. Rev. Lett. 102, 195505 (2009).
http://dx.doi.org/10.1103/PhysRevLett.102.195505
10.
10. H. Zhang, C. X. Liu, X. L. Qi, X. Dai, Z. Fang, and S. C. Zhang, Nat. Phys. 5, 438 (2009).
http://dx.doi.org/10.1038/nphys1270
11.
11. B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, Nat. Nanotechnol. 6, 147 (2011).
http://dx.doi.org/10.1038/nnano.2010.279
12.
12. Y. Xuan, Y. Q. Wu, T. Shen, M. Qi, M. A. Capano, J. A. Cooper, and P. D. Ye, Appl. Phys. Lett. 92, 013101 (2008).
http://dx.doi.org/10.1063/1.2828338
13.
13. X. Wang, S. M. Tabakman, and H. Dai, J. Am. Chem. Soc. 130, 8152 (2008).
http://dx.doi.org/10.1021/ja8023059
14.
14. H. Liu and P. D. Ye, Appl. Phys. Lett. 99, 052108 (2011).
http://dx.doi.org/10.1063/1.3622306
15.
15. G. Lee, B. Lee, J. Kim, and K. Cho, J. Phys. Chem. C 113, 14225 (2009).
http://dx.doi.org/10.1021/jp904321n
16.
16. C. R. Dean, A. F. Young, I. Meric, C. Lee, L. Wang, S. Sorgenfrei, K. Watanabe, T. Taniguchi, P. Kim, K. L. Shepard, and J. Hone, Nat. Nanotechnol. 5, 722 (2010).
http://dx.doi.org/10.1038/nnano.2010.172
17.
17. H. Liu and P. D. Ye, IEEE Electron Device Lett. 33, 546 (2012).
http://dx.doi.org/10.1109/LED.2012.2184520
18.
18. H. F. Ng, Pattern Recogn. Lett. 27, 1644 (2006).
http://dx.doi.org/10.1016/j.patrec.2006.03.009
19.
19. Y. Zhao, N. E. Schultz, and D. G. Truhlar, J. Chem. Theory Comput. 2, 364 (2006).
http://dx.doi.org/10.1021/ct0502763
20.
20. T. Heine, L. Zhechkov, and G. Seifert, Phys. Chem. Chem. Phys. 6, 980 (2004).
http://dx.doi.org/10.1039/b316209e
21.
21. S. Patchkovski, J. S. Tse, S. N. Yurchenko, L. Zhechkov, T. Heine, and G. Seifert, Proc. Natl. Acad. Sci. U.S.A. 102, 10439 (2005).
http://dx.doi.org/10.1073/pnas.0501030102
22.
22. A. Ambrosetti and P. L. Silvestrelli, J. Phys. Chem. C 115, 3695 (2011).
http://dx.doi.org/10.1021/jp110669p
23.
23. S. M. George, Chem. Rev. 110, 111 (2010).
http://dx.doi.org/10.1021/cr900056b
24.
24. S. Kim, J. Nah, I. Jo, D. Shahrjerdi, L. Colombo, Z. Yao, E. Tutuc, and S. K. Banerjee, Appl. Phys. Lett. 94, 062107 (2009).
http://dx.doi.org/10.1063/1.3077021
25.
25. T. Shen, J. J. Gu, M. Xu, Y. Q. Wu, M. L. Bolen, M. A. Capano, L. W. Engel, and P. D. Ye, Appl. Phys. Lett. 95, 172105 (2009).
http://dx.doi.org/10.1063/1.3254329
26.
26. B. Lee, S.-Y. Park, H.-C. Kim, K. J. Cho, E. M. Vogel, M. J. Kim, R. M. Wallace, and J. Kim, Appl. Phys. Lett. 92, 203102 (2008).
http://dx.doi.org/10.1063/1.2928228
27.
27. D. K. Schroder, Semiconductor Material and Device Charaterization, 3rd ed. (John Wiley and Sons, Inc., 2006), pp 342.
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/content/aip/journal/apl/100/15/10.1063/1.3703595
2012-04-13
2015-07-31

Abstract

We investigate the integration of Al2O3 high-k dielectric on two-dimensional (2D) crystals of boron nitride (BN) and molybdenum disulfide (MoS2) by atomic layer deposition(ALD). We demonstrate the feasibility of direct ALDgrowth with trimethylaluminum and water as precursors on both 2D crystals. Through theoretical and experimental studies, we found that the initial ALD cycles play the critical role, during which physical adsorption dominates precursor adsorption at the crystal surface. We model the initial ALDgrowth stages at the 2D surface by analyzing Lennard-Jones potentials, which could guide future optimization of the ALD process on 2D crystals.

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Scitation: The integration of high-k dielectric on two-dimensional crystals by atomic layer deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/15/10.1063/1.3703595
10.1063/1.3703595
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