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Low-threshold intersubband laser based on interface-scattering-rate engineering
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View: Figures


Image of FIG. 1.
FIG. 1.

Conduction band profile and moduli-square of the Wannier-Stark states of a single cascade under 100 kV/cm bias. The upper and lower laser states are highlighted with thick solid lines. The ground states are in black, and the excited states are in gray. The average Al-content in the composite barriers is indicated for each barrier. The layer thickness in nm starting from the thinnest well, W1: 1.1/2.0/4.0/1.2/3.7/1.6/3.0/1.4/2.7/1.2/2.4/1.0/2.3/0.9/2.0/1.9/1.9/2.9/1.6/3.9. The strained In0.73Ga0.27As well layers are in roman, and the strained digital-alloy InAlAs layers (composed of In0.52Al0.48As and AlAs) layers are in bold. Underlined layers are doped to cm−3.

Image of FIG. 2.
FIG. 2.

Illustration of the impact of individual interfaces on the intersubband scattering between the upper laser state and the lower laser state calculated for the three-well section of the transition region of the reference design (left) and the current design (right). Term of Eq. (1) is plotted with black symbols. Gray background plots in the same z-scale the conduction band edge and the moduli square of the wave functions in transition region, so one can recognize the impact of individual interfaces.

Image of FIG. 3.
FIG. 3.

Emission spectrum as a function of the drive current for 25 m × 3 mm laser stripe at room temperature measured with 100-ns current pulses at a repetition rate of 10 kHz. The inset shows the half-width of the emission spectrum as a function of drive current, saturating at 26 meV as the current is reduced. Measured in the same way electroluminescence half-width at 80 K saturates at approximately 20 meV.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low-threshold intersubband laser based on interface-scattering-rate engineering