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AFM image of the Ge islands located on the surface (a). ATP microscopy performed without removing the native oxide on the sample surface: (b) 3D volume, and (c) cross-sectional view of a 16 nm-thick slice taken in the same 3D volume. Only 10% of the Si atoms (gray dots), 20% of the Ni atoms (green dots), 50% of the Ge atoms (red dots), and 100% of the O atoms (blue dots) of the sample are shown in both figures.
ATP microscopy performed after removing the native oxide on the sample surface: cross-sectional view of a 24 nm-thick slice taken in a 3D volume showing 2% of the Si atoms (gray dots), 6% of the Ni atoms (green dots), and 100% of the Ge atoms (red dots) of the sample.
1D Ge concentration profiles measured in different directions in several dome islands. The inset is a schematic based upon a dome island TEM image showing the analysis directions of the concentration profiles (i), (ii), (iii), (iv), and (v) through the Ge islands.
Association of Ge lateral profiles measured at the bottom of the islands along the lateral direction (direction (v)) in the four different islands corresponding to the top-down profiles presented in Fig. 3.
Two-dimensional Ge distribution measured around the core of an island, in a single APT volume.
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