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(a) Cross sectional SEM micrograph (NovelX mySEM) of wet-etched silicon nanowires. (b) Results of CV testing (1 M KCl at a 50 mV/s scan rate) for SiNW array, SiC coated SiNW array and SiC coated planar Si for comparison. (c) Cross sectional SEM micrograph of SiC coated SiNW from (a). Scale bar is 10 μm in both (a) and (c).
(a) Raman spectrum of an isolated SiC/SiNW. A broad SiC band is prominent around 790 cm−1, corresponding to polycrystalline SiC. Inset shows TEM image of wire indicating a rough polycrystalline coating, expected of SiC coating as deposited. Scale bar is 200 nm. (b) Capacitance retention results for SiC coated SiNWs. 95% of the original capacitance is retained after 1000 cycles. A 50 mV/s scan rate in 1 M KCl was used.
(a) Cross sectional SEM images of SiC/SiNW arrays etched for different times, corresponding to results in (b). Scale bar is 10 μm. (b) Results of capacitance testing for SiC/SiNWs from (a) at 50 mV/s scan rate in 1 M KCl. (c) CV results for SiC/SiNWs (∼13 μm in length) scanned over a range of 10 mV/s to 5 V/s in 1 M KCl.
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