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Effect of quantum well cap layer thickness on the microstructure and performance of InGaN/GaN solar cells
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10.1063/1.4704189
/content/aip/journal/apl/100/16/10.1063/1.4704189
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/16/10.1063/1.4704189

Figures

Image of FIG. 1.
FIG. 1.

(a) Cross-sectional schematic of the epitaxial structure of the devices. (b) PL spectra from samples with varying GaN cap layer thickness.

Image of FIG. 2.
FIG. 2.

(a) EQE spectra from devices with varying GaN cap layer thickness. (b) Dark and illuminated J-V curves from devices with varying GaN cap layer thickness.

Image of FIG. 3.
FIG. 3.

(a) HAADF-STEM images from (a) the sample with 1.5 nm GaN cap layers and (b) the sample with 3.0 nm GaN cap layers. Schematics illustrating how the GaN cap layer may react with the H2 carrier gas for (c) the sample with 1.5 nm GaN cap layers and (d) the sample with 3.0 nm GaN cap layers.

Image of FIG. 4.
FIG. 4.

APT data from (a) the sample with 1.5 nm GaN cap layers and (b) the sample with 3.0 nm GaN cap layers. 3-D indium atom maps are shown in the upper part of the figure and 1-D profiles of the average indium concentration are shown in the lower part of the figure. The isoconcentration surfaces in the 3-D atom maps identify the locations at which the indium concentration (x in InxGa1−xN) is equal to 5%.

Tables

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Table I.

Summary of performance metrics for devices with varying GaN cap layer thickness.

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/content/aip/journal/apl/100/16/10.1063/1.4704189
2012-04-16
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of quantum well cap layer thickness on the microstructure and performance of InGaN/GaN solar cells
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/16/10.1063/1.4704189
10.1063/1.4704189
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