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Red-green luminescence in indium gallium nitride alloys investigated by high pressure optical spectroscopy
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10.1063/1.4704367
/content/aip/journal/apl/100/16/10.1063/1.4704367
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/16/10.1063/1.4704367
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Figures

Image of FIG. 1.
FIG. 1.

(a) Optical absorption spectra of the InGaN epilayer B at room temperature and selected pressures. Note that the interference fringes are most likely due to Fabry-Perot oscillations within the sapphire substrate. (b) Pressure dependence of the optical absorption edge up to 10 GPa (symbols) and linear fit (dotted line).

Image of FIG. 2.
FIG. 2.

(a) Photoluminescence spectra of the InGaN epilayer B at room temperature and selected pressures. A gaussian fit is shown in dotted line for the highest pressure spectrum. Inset: micrograph of the pressure chamber. (b) Pressure dependence of the PL peak energy up to 10 GPa (symbols) and linear fit (dotted line).

Image of FIG. 3.
FIG. 3.

(a) Pressure coefficient for InGaN alloys as a function of the indium content measured by optical absorption or photoluminescence. Lines refer to numerical simulations and symbols to experimental data including this study and previously published data on InGaN epilayers under pressure. Literature Refs.: Shan,27 Franssen,21,25 Ibanez,19 Gorczyca uniform and clustered simulations7 and PL,8 Liu,28 and Perlin.24 (b) Sketch of the InGaN conduction and valence band edges (VBE) and the Fermi stabilization energy as a function of the indium content. (c) InGaN bandgap selected experimental values (black squares) and present sample data (red dots) for the whole composition range.

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/content/aip/journal/apl/100/16/10.1063/1.4704367
2012-04-17
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Red-green luminescence in indium gallium nitride alloys investigated by high pressure optical spectroscopy
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/16/10.1063/1.4704367
10.1063/1.4704367
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