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(a) Scheme of TIB consisting of two Be2Se3 thin films separated by dielectric spacer. Electron (hole) carriers are induced by n(p)-type doping or applied external gates. Indirect magnetoexcitons can be formed in presence of strong external magnetic field. (b) and (c) are schematic representations of the chemical potential location. (b) represents the fully occupied case and (c) represents the partially occupied case.
Energy dispersion of the first five magnetoexciton LLs for the fully (left panels) and partially (right panels) occupied cases. and μ = 1. The spacer thickness d = for (a) and (b), while d = for (c) and (d).
The optical absorption curves with μ = 0 for (a) fully and (b) partially occupied cases. The spacer thickness is set to d = . The corresponding schematic sketch of magnetoexcitons is plotted in the insets.
Same as Fig. 3(b) except μ = 1. The green dotted curve represents the corresponding optical absorption spectrum at the limit of .
The optical absorption spectrums with μ = 1 for (a) fully and (b) partially occupied cases when the interlevel Coulomb interaction is included. The red, blue, and green curves are for d = , , and , respectively.
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