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Improvement in the device performance of tin-doped indium oxide transistor by oxygen high pressure annealing at 150 °C
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10.1063/1.4704926
/content/aip/journal/apl/100/16/10.1063/1.4704926
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/16/10.1063/1.4704926
/content/aip/journal/apl/100/16/10.1063/1.4704926
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/content/aip/journal/apl/100/16/10.1063/1.4704926
2012-04-19
2014-10-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improvement in the device performance of tin-doped indium oxide transistor by oxygen high pressure annealing at 150 °C
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/16/10.1063/1.4704926
10.1063/1.4704926
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