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Improvement in the device performance of tin-doped indium oxide transistor by oxygen high pressure annealing at 150 °C
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10.1063/1.4704926
/content/aip/journal/apl/100/16/10.1063/1.4704926
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/16/10.1063/1.4704926

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic diagram of HPA equipment. (b) The cross-section of fabricated ITO TFTs with a bottom gate structure.

Image of FIG. 2.
FIG. 2.

Representative transfer characteristics for (a) reference device, (b) 2.5 atm O2 annealed device, and (c) 5.0 atm O2 annealed device. The directions of the forward and reverse sweeps are indicated.

Image of FIG. 3.
FIG. 3.

Glancing-angle x-ray diffraction patterns for the ITO films deposited on silicon substrate, with different annealing pressure. The sharp peak at ∼52.5° is due to the Si lattice from the substrate. Only very broad peak appears near 55.2°, indicating the amorphous phase of ITO film.

Image of FIG. 4.
FIG. 4.

O 1s XPS spectra of (a) reference ITO film, (b) 2.5 atm O2 annealed ITO film, and (c) 5.0 atm O2 annealed ITO film. The open circles and colored lines indicate the experimental data and deconvoluted components, respectively. The black lines show the resulting sum of deconvoluted components.

Image of FIG. 5.
FIG. 5.

Comparison of IDS degradation for various ITO TFTs under PBS conditions.

Tables

Generic image for table
Table I.

Hall measurement result for the various ITO films.

Generic image for table
Table II.

XPS O1s result for the reference, 2.5 and 5.0 atm O2 annealed ITO films.

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/content/aip/journal/apl/100/16/10.1063/1.4704926
2012-04-19
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improvement in the device performance of tin-doped indium oxide transistor by oxygen high pressure annealing at 150 °C
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/16/10.1063/1.4704926
10.1063/1.4704926
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