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(a) Schematic diagram of HPA equipment. (b) The cross-section of fabricated ITO TFTs with a bottom gate structure.
Representative transfer characteristics for (a) reference device, (b) 2.5 atm O2 annealed device, and (c) 5.0 atm O2 annealed device. The directions of the forward and reverse sweeps are indicated.
Glancing-angle x-ray diffraction patterns for the ITO films deposited on silicon substrate, with different annealing pressure. The sharp peak at ∼52.5° is due to the Si lattice from the substrate. Only very broad peak appears near 55.2°, indicating the amorphous phase of ITO film.
O 1s XPS spectra of (a) reference ITO film, (b) 2.5 atm O2 annealed ITO film, and (c) 5.0 atm O2 annealed ITO film. The open circles and colored lines indicate the experimental data and deconvoluted components, respectively. The black lines show the resulting sum of deconvoluted components.
Comparison of IDS degradation for various ITO TFTs under PBS conditions.
Hall measurement result for the various ITO films.
XPS O1s result for the reference, 2.5 and 5.0 atm O2 annealed ITO films.
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