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Nano-electron beam induced current and hole charge dynamics through uncapped Ge nanocrystals
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10.1063/1.4705299
/content/aip/journal/apl/100/16/10.1063/1.4705299
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/16/10.1063/1.4705299
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) AFM topographic image and (b) the energy band diagram of the device (AFM tip/sample contact). (c) and (d) are the corresponding electric images obtained in NC30 under (−3 V) and (+3 V), respectively (just after e-beam irradiation in the condition of nano-EBIC imaging).

Image of FIG. 2.
FIG. 2.

Schematic representation of the current kinetics measurement procedure. The C-AFM tip is permanently in contact with the sample surface, the focused e-beam impact (E = 5 keV and I = 2 nA) is at a fixed position away from the tip of about L ∼ 0.5 µm, where L is the distance corresponding to the hole effective diffusion length measured at E = 5 keV and I = 2 nA.9

Image of FIG. 3.
FIG. 3.

Current kinetics through NCs in: (a) NC30 and NC60, and (b) NC0 during cycles of irradiation (i.e., when the e-beam is first turned on, off, …). (c) gives an enlarged part of the current kinetics through NC60.

Image of FIG. 4.
FIG. 4.

Typical example of the determination of the charging time constant from a fitting process by an exponential law for NC30.

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/content/aip/journal/apl/100/16/10.1063/1.4705299
2012-04-19
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nano-electron beam induced current and hole charge dynamics through uncapped Ge nanocrystals
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/16/10.1063/1.4705299
10.1063/1.4705299
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