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Co/Ni multilayers with perpendicular anisotropy for spintronic device applications
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10.1063/1.4704184
/content/aip/journal/apl/100/17/10.1063/1.4704184
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/17/10.1063/1.4704184
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Figures

Image of FIG. 1.
FIG. 1.

Magnetic hysteresis loops at room temperature as a function of perpendicular applied field for as-grown Ta 3/Pt 20/(Co 0.3/Ni t Ni)n/Ta 3/Pt 3 multilayered samples with various repetition numbers n. The thickness t of the Ni sublayers within the multilayer is (a) 0.3 nm, (b) 0.4 nm, (c) 0.6 nm. The inset in (b) is the out-of-plane M-H loop of Ta 3/Pt 20/(Co 0.3/Ni 0.4)8/Ta 3/Pt3 (black curve) and Ta 3/Pt 20/(Co 2.4/Ni 3.2)/Ta 3/Pt 3 (red curve) samples.

Image of FIG. 2.
FIG. 2.

Variation of the anisotropy field with repetition number n for Ta 3/Pt 20/(Co t1/Ni t2)n/Ta 3/Pt 3 samples. Positive anisotropy fields correspond to out-of-plane magnetization.

Image of FIG. 3.
FIG. 3.

Variation of K eff D + 2πD M s 2 as a function of the inverse repetition number in Ta 3/Pt 20/(Co t 1/Ni t 2)n/Ta 3/Pt 3 samples.

Image of FIG. 4.
FIG. 4.

Anisotropy field as a function of annealing temperature for Co/Ni multilayers with different Co and Ni thicknesses and different repetition numbers.

Image of FIG. 5.
FIG. 5.

Magnetic hysteresis loop with perpendicular applied magnetic field of a Ta 3/Pt 20/(Co 0.3/Ni 0.4)6/MgO 1.4/(Co 0.3/0.4)3/Pt 3 sample after annealing at 250 °C for 30 min.

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/content/aip/journal/apl/100/17/10.1063/1.4704184
2012-04-26
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Co/Ni multilayers with perpendicular anisotropy for spintronic device applications
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/17/10.1063/1.4704184
10.1063/1.4704184
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