1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Electrical activation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28
Rent:
Rent this article for
USD
10.1063/1.4704561
/content/aip/journal/apl/100/17/10.1063/1.4704561
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/17/10.1063/1.4704561
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

SIMS measurements of implanted bismuth-209 in isotopically enriched silicon-28 with a native oxide layer. The total implant dose is 1.1 × 1012 cm−2 with implant energies ranging from 40, 80, 120, 200 to 360 keV. The profiles show the dopant concentrations before (black) and after a thermal activation anneal (red—20 min at 800 °C).

Image of FIG. 2.
FIG. 2.

Electrical activation yields of implanted bismuth ion in silicon for a series of annealing conditions; circles (blue): 20 min; square (red): 5 min; triangle (green): 15 min.

Image of FIG. 3.
FIG. 3.

Simulated cw-ESR spectrum of Si:Bi (top) showing the expected line positions for a -wave frequency of 9.42 GHz and data (bottom) measured at K. The line at 335.4 mT originates from dangling bonds at the silicon surface.

Image of FIG. 4.
FIG. 4.

ESE decay using two axis refocusing pulses (XYXY) measured at the  − 1/2 line of 28Si:Bi at K. The decay signal at times longer than 0.5 ms is distorted by the phase noise resulting from magnetic field fluctuations,29 and therefore only the initial portion of the decay is used in an exponential fit to extract the electron spin coherence time of ms. The inset displays a cw-ESR spectrum of the −1/2 line and its fit yields a peak-to-peak line-width of 12.2 ± 0.4 T.

Loading

Article metrics loading...

/content/aip/journal/apl/100/17/10.1063/1.4704561
2012-04-24
2014-04-23
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical activation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/17/10.1063/1.4704561
10.1063/1.4704561
SEARCH_EXPAND_ITEM