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SIMS measurements of implanted bismuth-209 in isotopically enriched silicon-28 with a native oxide layer. The total implant dose is 1.1 × 1012 cm−2 with implant energies ranging from 40, 80, 120, 200 to 360 keV. The profiles show the dopant concentrations before (black) and after a thermal activation anneal (red—20 min at 800 °C).
Electrical activation yields of implanted bismuth ion in silicon for a series of annealing conditions; circles (blue): 20 min; square (red): 5 min; triangle (green): 15 min.
Simulated cw-ESR spectrum of Si:Bi (top) showing the expected line positions for a -wave frequency of 9.42 GHz and data (bottom) measured at K. The line at 335.4 mT originates from dangling bonds at the silicon surface.
ESE decay using two axis refocusing pulses (XYXY) measured at the − 1/2 line of 28Si:Bi at K. The decay signal at times longer than 0.5 ms is distorted by the phase noise resulting from magnetic field fluctuations,29 and therefore only the initial portion of the decay is used in an exponential fit to extract the electron spin coherence time of ms. The inset displays a cw-ESR spectrum of the −1/2 line and its fit yields a peak-to-peak line-width of 12.2 ± 0.4 T.
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