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Reducing spin torque switching current density by boron insertion into a CoFeB free layer of a magnetic tunnel junction
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10.1063/1.4704916
/content/aip/journal/apl/100/17/10.1063/1.4704916
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/17/10.1063/1.4704916
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic of the magnetic tunnel junction structure and (b) VSM measurements of the free layer magnetization versus the distance d of the inserted 1 Å thick boron layer within the free layer from the free layer/tunnel barrier interface. The dashed line shows the magnetization of a reference sample without a boron insertion layer.

Image of FIG. 2.
FIG. 2.

(a) Average MR, (b) RA product, (c) JC0 , and (d) thermal stability factor plotted against the position d of the 1 Å thick boron insertion layer. The dashed lines are measured for a reference sample without boron insertion.

Image of FIG. 3.
FIG. 3.

Ratio of the switching current density to the thermal stability factor as a function of the boron insertion position d. The dashed line shows the ratio for a reference sample without boron insertion.

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/content/aip/journal/apl/100/17/10.1063/1.4704916
2012-04-24
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Reducing spin torque switching current density by boron insertion into a CoFeB free layer of a magnetic tunnel junction
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/17/10.1063/1.4704916
10.1063/1.4704916
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