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Experimental evidence for the correlation between the weak inversion hump and near midgap states in dielectric/InGaAs interfaces
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10.1063/1.4704925
/content/aip/journal/apl/100/17/10.1063/1.4704925
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/17/10.1063/1.4704925
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Cross-sectional HR-TEM pictures of (a) Au/Ti/Si3N4/In0.53Ga0.47As and (b) Au/Ti/Al2O3/In0.53Ga0.47As gate stacks after post-deposition anneal.

Image of FIG. 2.
FIG. 2.

Typical temperature (at 10 kHz) (a) and frequency (at 300 K) (b) dependent C-V characteristics of Au/Ti/Al2O3/In0.53Ga0.47As gate stack, and C-V Qhump determination (c).

Image of FIG. 3.
FIG. 3.

Arrhenius plots of Qhump plotted versus 1/T for Au/Ti/Si3N4/In0.53Ga0.47As (a) and Au/Ti/Al2O3/In0.53Ga0.47As (b) gate stacks at 10 kHz for the 210–320 K temperature range.

Image of FIG. 4.
FIG. 4.

Parallel conductance peak activation energy determination of Au/Ti/Si3N4/In0.53Ga0.47As and Au/Ti/Al2O3/In0.53Ga0.47As gate stacks at 10 kHz in the 210–310 K temperature range.

Image of FIG. 5.
FIG. 5.

Qhump, normalized by Cox, behavior in the 10–100 kHz frequency range (a) and Dit distribution extracted by Terman method (b) for Au/Ti/Si3N4/In0.53Ga0.47As and Au/Ti/Al2O3/In0.53Ga0.47As gate stacks at 300 K.

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/content/aip/journal/apl/100/17/10.1063/1.4704925
2012-04-24
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Experimental evidence for the correlation between the weak inversion hump and near midgap states in dielectric/InGaAs interfaces
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/17/10.1063/1.4704925
10.1063/1.4704925
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