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Cross-sectional HR-TEM pictures of (a) Au/Ti/Si3N4/In0.53Ga0.47As and (b) Au/Ti/Al2O3/In0.53Ga0.47As gate stacks after post-deposition anneal.
Typical temperature (at 10 kHz) (a) and frequency (at 300 K) (b) dependent C-V characteristics of Au/Ti/Al2O3/In0.53Ga0.47As gate stack, and C-V Qhump determination (c).
Arrhenius plots of Qhump plotted versus 1/T for Au/Ti/Si3N4/In0.53Ga0.47As (a) and Au/Ti/Al2O3/In0.53Ga0.47As (b) gate stacks at 10 kHz for the 210–320 K temperature range.
Parallel conductance peak activation energy determination of Au/Ti/Si3N4/In0.53Ga0.47As and Au/Ti/Al2O3/In0.53Ga0.47As gate stacks at 10 kHz in the 210–310 K temperature range.
Qhump, normalized by Cox, behavior in the 10–100 kHz frequency range (a) and Dit distribution extracted by Terman method (b) for Au/Ti/Si3N4/In0.53Ga0.47As and Au/Ti/Al2O3/In0.53Ga0.47As gate stacks at 300 K.
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