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Doping characterization for germanium-based microelectronics and photovoltaics using the differential Hall technique
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10.1063/1.4705293
/content/aip/journal/apl/100/17/10.1063/1.4705293
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/17/10.1063/1.4705293
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

SIMS profiles for (grey) 500 eV, 1015 cm−2 B ion implant in n-type Ge, following 40 keV, 1015 cm−2 Ge pre-amorphizing implant and annealing at 600 °C for 100 s; (red) P spin-on-dopant in p-type Ge, following diffusion annealing at 600 °C for 600 s.

Image of FIG. 2.
FIG. 2.

Total etched depth during profiling plotted as a function of etch time for (a) P-doped p-type Ge and (b) B-implanted n-type Ge. In each case, the average etch rate and standard deviation is given. Lines are drawn as a guide to the eye, illustrating the different etch linearity in p-type (grey) and n-type (red) regions.

Image of FIG. 3.
FIG. 3.

Hole concentration and Hall mobility profiles as a function of depth for ultra-shallow B-doped Ge measured using the differential Hall technique. The carrier profile is compared to SIMS data. Hall data are corrected using a scattering factor equal to 1.2.

Image of FIG. 4.
FIG. 4.

Electron concentration and Hall mobility profiles as a function of depth for P-doped Ge measured using the differential Hall technique. The carrier profile is compared to SIMS data.

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/content/aip/journal/apl/100/17/10.1063/1.4705293
2012-04-24
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Doping characterization for germanium-based microelectronics and photovoltaics using the differential Hall technique
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/17/10.1063/1.4705293
10.1063/1.4705293
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