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Probing and modelling the localized self-mixing in a GaN/AlGaN field-effect terahertz detector
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Measurement circuit diagram. The inset is an artificially colored scanning-electron micrograph of the detector. (b) The I-V characteristics of the detector. (c) The differential conductance at V as a function of . (d) A color-scale plot of the differential conductance as a function of and drain/source bias ( or ), which is applied either at the drain or at the source. The dashed lines separate the map into the LR, the TR, the SR, and the PR.

Image of FIG. 2.
FIG. 2.

Spatial distributions of the field enhancement factors ((a) and (b)) and phases ((c) and (d)) of the horizontal and the perpendicular field.

Image of FIG. 3.
FIG. 3.

The measured (a) and the simulated (b) terahertz response as a function of and . Three vertical lines are marked at V, V, and V. Along the line at V, five bias conditions are marked by , and , corresponding to , −2.0, −3.0, −3.5, and −4.1 V, respectively. In the SR regime when the bias is applied at the source, there is a clear deviation between the experiment and the simulation.

Image of FIG. 4.
FIG. 4.

(a) The spatial distributions of the charge modulation and the self-mixing term at V with a DC bias of 2 V applied at the source or at the drain. (b) The spatial distributions of charge modulation at different gate voltages and at a constant drain bias ( V). The mixing current as a function of with (c) V, (d) V, and (e) V. The solid curves are simulated data.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Probing and modelling the localized self-mixing in a GaN/AlGaN field-effect terahertz detector