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Room temperature PR spectrum of InGaAlAs layer (25% Al). Squares are the fit obtained using the third derivative functional form model.
(a) PL spectra of sample A taken as a function of excitation power. (b) Schematic of the InGaAlAs/GaAsSb (25% Al, 43% Sb) type II band structure assuming a flat band conditions. The figure illustrates the band offsets and the gaps/type II transitions.
Side view of the HBT structure of sample B (C). Values in brackets belongs to sample C. A dashed arrow is pointing to the position of the micro-PR measurement spot.
Room temperature PR spectrum of the InGaAlAs/GaAsSb/InP HBT, sample B.
Room temperature PR spectrum of the InGaAlAs/GaAsSb/InP HBT, sample C.
Third derivative functional form model regression results of the InGaAlAs LH and HH energy transitions at room temperature for 25% Al.
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