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Local micro-photoreflectance spectroscopy measurements on type II InGaAlAs/GaAsSb/InP heterojunction bipolar transistor: Correlation with electrical characteristics
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10.1063/1.4705408
/content/aip/journal/apl/100/17/10.1063/1.4705408
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/17/10.1063/1.4705408

Figures

Image of FIG. 1.
FIG. 1.

Room temperature PR spectrum of InGaAlAs layer (25% Al). Squares are the fit obtained using the third derivative functional form model.

Image of FIG. 2.
FIG. 2.

(a) PL spectra of sample A taken as a function of excitation power. (b) Schematic of the InGaAlAs/GaAsSb (25% Al, 43% Sb) type II band structure assuming a flat band conditions. The figure illustrates the band offsets and the gaps/type II transitions.

Image of FIG. 3.
FIG. 3.

Side view of the HBT structure of sample B (C). Values in brackets belongs to sample C. A dashed arrow is pointing to the position of the micro-PR measurement spot.

Image of FIG. 4.
FIG. 4.

Room temperature PR spectrum of the InGaAlAs/GaAsSb/InP HBT, sample B.

Image of FIG. 5.
FIG. 5.

Room temperature PR spectrum of the InGaAlAs/GaAsSb/InP HBT, sample C.

Tables

Generic image for table
Table I.

Third derivative functional form model regression results of the InGaAlAs LH and HH energy transitions at room temperature for 25% Al.

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/content/aip/journal/apl/100/17/10.1063/1.4705408
2012-04-24
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Local micro-photoreflectance spectroscopy measurements on type II InGaAlAs/GaAsSb/InP heterojunction bipolar transistor: Correlation with electrical characteristics
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/17/10.1063/1.4705408
10.1063/1.4705408
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