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Schematic illustrations of MILC (a) and AIC methods (b), and Nomarski optical micrograph of sample with multi-crystal-seeds, which are used for Ge lateral growth over Si3N4, i.e., (110) Si seed by MILC, (111) Si seed by AIC, and (100) substrate-Si seed through Si3N4 window.
EBSD image of grown-Si stripe obtained by MILC process (600 °C for 4 h) (a), and fraction of (110) orientation as a function of distance (d) from Ni-region (b). Histogram of the orientation distributions estimated from MILC-Si (c). Insertions in (b) are the IPFs showing orientation distributions of grown-Si with the distances (d) of 5 and 50 µm.
Annealing time dependent crystallization fraction of Si films during AIC process (450 °C) for samples with different air-exposure time (5 min, 1 h, and 24 h) (a). EBSD images for fully crystallized samples (tair: 1 h and 24 h) are displayed in the figure. Fraction of (111) orientation as functions of time necessary for layer-exchange process (b). Histogram of the orientation distributions estimated from AIC-Si (c).
Schematic sample structure used for hybrid-formation of (111), (110), and (100) GOI (a). EBSD (b) and cross-sectional TEM images (c) of grown-Ge after SiGe-mixing triggered rapid-melting growth (RTA: 1000 °C for 1 s).
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