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Ultraviolet electroluminescence from ordered ZnO nanorod array/p-GaN light emitting diodes
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View: Figures


Image of FIG. 1.
FIG. 1.

Ordered and aligned ZnO nanorod arrays on the GaN substrates grown at 50 °C for 6 h with the reactant concentration of (a) 0.075 M and (b) 0.035 M by using 500 nm PS microspheres. (c) Top view and (d) 45° tilt view of the ZnO nanorod array on the GaN substrate grown at 0.05 M, 50 °C for 6 h by using 1 μm PS microspheres.

Image of FIG. 2.
FIG. 2.

AFM images of (a) the ZnO nanorod array, (b) the ZnO nanorod array after filling of PMMA and (c) after oxygen plasma etching of PMMA, and (d) the height profile of the lines drawn in Figs. 2(a)–2(c).

Image of FIG. 3.
FIG. 3.

EL spectra of (a) a ZnO nanorods/p-GaN LED and (b) a ZnO film-based LED under various currents ranging from 2 to 10 mA. The insets show the schematic structures of the corresponding LEDs, respectively.

Image of FIG. 4.
FIG. 4.

(a) PL spectra of the ZnO thin film on the p-GaN substrate and the ZnO nanorods with different diameters. (b) EL spectra of the LEDs based on ZnO nanorods with different diameters at the injection current of 6 mA, together with the EL spectrum of ZnO film-based LED at the same current. The inset shows the integrated EL intensities of all the three devices as a function of the injection current. The solid line represents the fitting result based on the power law L = cIm .


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ultraviolet electroluminescence from ordered ZnO nanorod array/p-GaN light emitting diodes