banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Realization of high-quality HfO2 on In0.53Ga0.47As by in-situ atomic-layer-deposition
Rent this article for
View: Figures


Image of FIG. 1.
FIG. 1.

(a) As 2p1/2 core level spectra of as-deposited in-situ ALD-HfO2(0.8 nm)/In0.53Ga0.47As interface and clean In0.53Ga0.47As surface. The measured raw data of the ALD-HfO2/In0.53Ga0.47As interface along with the background are displayed in the lower part of the figure, with InGaAs spectrum shown as a reference for fitting. (b) As 3p core level spectra of HfO2/In0.53Ga0.47As interfaces of as-deposited and 800 °C PDA HfAlO(∼4.5 nm)/HfO2(0.8 nm)/In0.53Ga0.47As.

Image of FIG. 2.
FIG. 2.

C-V characteristics of ALD-HfAlO/HfO2 on (a)-(d) p-In0.53Ga0.47As and (e)-(h) n-In0.53Ga0.47As measured at temperatures from 300 to 77 K.

Image of FIG. 3.
FIG. 3.

CET versus HfAlO/HfO2 physical thickness (tox) in ALD-HfAlO/HfO2/p-In0.53Ga0.47As MOSCAPs. The inset shows J-E curves of p-In0.53Ga0.47As MOSCAP with HfAlO(4.5 nm)/HfO2(0.8 nm), which was 800 °C annealed prior to the deposition of Ni electrodes.

Image of FIG. 4.
FIG. 4.

D it spectra of in-situ ALD-HfAlO/HfO2/In0.53Ga0.47As MOSCAPs subjected to 800 °C PDA, with and without post metallization FGA, derived using temperature-dependent conductance method. The spectra of In0.53Ga0.47As MOSCAPs using in-situ ALD-HfAlO/Al2O3 and ex-situ ALD-Al2O3 as gate dielectrics are also shown in the figure for comparison. (The curve of ex-situ ALD-Al2O3 is reproduced from H. C. Lin et al., Microelectron. Eng. 86, 1554–1557 (2009). Copyright © 2009, Elsevier.)


Article metrics loading...


Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Realization of high-quality HfO2 on In0.53Ga0.47As by in-situ atomic-layer-deposition