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Realization of high-quality HfO2 on In0.53Ga0.47As by in-situ atomic-layer-deposition
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10.1063/1.4706261
/content/aip/journal/apl/100/17/10.1063/1.4706261
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/17/10.1063/1.4706261
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Figures

Image of FIG. 1.
FIG. 1.

(a) As 2p1/2 core level spectra of as-deposited in-situ ALD-HfO2(0.8 nm)/In0.53Ga0.47As interface and clean In0.53Ga0.47As surface. The measured raw data of the ALD-HfO2/In0.53Ga0.47As interface along with the background are displayed in the lower part of the figure, with InGaAs spectrum shown as a reference for fitting. (b) As 3p core level spectra of HfO2/In0.53Ga0.47As interfaces of as-deposited and 800 °C PDA HfAlO(∼4.5 nm)/HfO2(0.8 nm)/In0.53Ga0.47As.

Image of FIG. 2.
FIG. 2.

C-V characteristics of ALD-HfAlO/HfO2 on (a)-(d) p-In0.53Ga0.47As and (e)-(h) n-In0.53Ga0.47As measured at temperatures from 300 to 77 K.

Image of FIG. 3.
FIG. 3.

CET versus HfAlO/HfO2 physical thickness (tox) in ALD-HfAlO/HfO2/p-In0.53Ga0.47As MOSCAPs. The inset shows J-E curves of p-In0.53Ga0.47As MOSCAP with HfAlO(4.5 nm)/HfO2(0.8 nm), which was 800 °C annealed prior to the deposition of Ni electrodes.

Image of FIG. 4.
FIG. 4.

D it spectra of in-situ ALD-HfAlO/HfO2/In0.53Ga0.47As MOSCAPs subjected to 800 °C PDA, with and without post metallization FGA, derived using temperature-dependent conductance method. The spectra of In0.53Ga0.47As MOSCAPs using in-situ ALD-HfAlO/Al2O3 and ex-situ ALD-Al2O3 as gate dielectrics are also shown in the figure for comparison. (The curve of ex-situ ALD-Al2O3 is reproduced from H. C. Lin et al., Microelectron. Eng. 86, 1554–1557 (2009). Copyright © 2009, Elsevier.)

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/content/aip/journal/apl/100/17/10.1063/1.4706261
2012-04-26
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Realization of high-quality HfO2 on In0.53Ga0.47As by in-situ atomic-layer-deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/17/10.1063/1.4706261
10.1063/1.4706261
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