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Substrate-assisted nucleation of ultra-thin dielectric layers on graphene by atomic layer deposition
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10.1063/1.4707376
/content/aip/journal/apl/100/17/10.1063/1.4707376
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/17/10.1063/1.4707376
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Figures

Image of FIG. 1.
FIG. 1.

ALD growth of 10 nm Al2O3 at Tch = 80 °C on (a) HOPG and (b) CVD graphene after transfer on SiO2. SEM pictures taken in the same conditions at 3 kV.

Image of FIG. 2.
FIG. 2.

ALD growth of Al2O3 at Tch = 80 °C on CVD graphene on Cu. (a) Large scale high quality monolayer graphene sheets grown on a Cu foil. Sample size is compared to a copper based 1 pence coin. SEM pictures taken in the same conditions at 3 kV after the growth of (b) 10 nm and (c) 3 nm of Al2O3. The red arrow points to a selected <10 nm wide crack.

Image of FIG. 3.
FIG. 3.

(a) Process leading to well wetted Al2O3/graphene films on SiO2. (b) Mapping of the Raman D/G ratio (λ = 532 nm, ×100 optic, 0.6 μm spot diameter, and 1 μm steps) of the encapsulated graphene sheet in-between Al2O3 and SiO2 (c) Statistical analyses confirm that the D/G ratio is typically 0.05-0.06, similar to as grown graphene.

Image of FIG. 4.
FIG. 4.

(a) Comparison of the coverage of the Al2O3 grown by ALD on different graphene-like materials and at different Tch (as observed through the SEM at ×100k magnification). Two trends clearly emerge. Low coverage: HOPG, monolayer graphene on SiO2 and graphene multilayers on Cu or Ni-Au; High coverage: monolayer graphene on Cu or Ni-Au. (b) Sketch of the trapping mechanism arising in the case of monolayer graphene/metal samples: water molecules are more efficiently adsorbed on the surface during the first ALD cycles and thus allow a more two dimensional Frank–van der Merwe growth of the Al2O3.

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/content/aip/journal/apl/100/17/10.1063/1.4707376
2012-04-26
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Substrate-assisted nucleation of ultra-thin dielectric layers on graphene by atomic layer deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/17/10.1063/1.4707376
10.1063/1.4707376
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