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(a) Sample structures, from the surface side, a highly doped p-AlGaAs window, p-AlGaAs emitter, n-GaNAs IB layer, highly doped (UIB)/lightly doped (BIB) n-AlGaAs, and n-GaAs buffer layer, respectively, grown on an n-GaAs substrate. In an additional control structure, the GaNAs IB layer of the BIB structure has been replaced by an InGaAs layer with similar bandgap but no IB. (b) and (c) are calculated band diagrams of the UIB and BIB structures.
Room temperature measurements: (a) PR spectrum of a GaNAs control sample, (b) EQE measurement of the UIB and BIB structures, and (c) ΔQE spectra for UIB, BIB, and InGaAs test structures.
Current density-voltage (J-V) characteristics of the UIB and BIB structures measured at room temperature under 30 suns of solar spectrum AM1.5 illumination.
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