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Two-photon excitation in an intermediate band solar cell structure
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10.1063/1.4709405
/content/aip/journal/apl/100/17/10.1063/1.4709405
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/17/10.1063/1.4709405
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Figures

Image of FIG. 1.
FIG. 1.

(a) Sample structures, from the surface side, a highly doped p-AlGaAs window, p-AlGaAs emitter, n-GaNAs IB layer, highly doped (UIB)/lightly doped (BIB) n-AlGaAs, and n-GaAs buffer layer, respectively, grown on an n-GaAs substrate. In an additional control structure, the GaNAs IB layer of the BIB structure has been replaced by an InGaAs layer with similar bandgap but no IB. (b) and (c) are calculated band diagrams of the UIB and BIB structures.

Image of FIG. 2.
FIG. 2.

Room temperature measurements: (a) PR spectrum of a GaNAs control sample, (b) EQE measurement of the UIB and BIB structures, and (c) ΔQE spectra for UIB, BIB, and InGaAs test structures.

Image of FIG. 3.
FIG. 3.

Current density-voltage (J-V) characteristics of the UIB and BIB structures measured at room temperature under 30 suns of solar spectrum AM1.5 illumination.

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/content/aip/journal/apl/100/17/10.1063/1.4709405
2012-04-27
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Two-photon excitation in an intermediate band solar cell structure
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/17/10.1063/1.4709405
10.1063/1.4709405
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