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Lateral heating of SiO2/Si: Interfacial Si structure change causing tunneling current reduction
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10.1063/1.4709418
/content/aip/journal/apl/100/17/10.1063/1.4709418
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/17/10.1063/1.4709418
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Figures

Image of FIG. 1.
FIG. 1.

(a) In a RTP chamber, a sandwich structure for lateral heating of a sample was used, where radiation from the top was blocked out. (b) The RTP equipment was modified for lateral heating of a sample by turning off the radiation from the top lamps. In both cases, there is no direct radiation on the sample, and the sample was heated by heat flows from the substrate holder. Most good results were from the hanging areas not from the contact area.

Image of FIG. 2.
FIG. 2.

(a) Experimental (dots) and simulated (lines) C-V curves of the Ni/SiO2/n-Si MOS capacitors in the hanging areas of samples before (control) and after lateral heating. Sample S1 was processed at 1050 °C for 10 s in helium containing ∼300 ppm O2 in the setting in Fig. 1(a). Sample S2 was processed at 1070 °C for 10 s in helium containing ∼250 ppm O2 in the setting in Fig. 1(a). Sample S3 was processed at 1050 °C for 45 s in Helium containing ∼200 ppm O2 in the setting in Fig. 1(b). Three devices () in each processed sample and two devices () in the control sample were tested for repeatability. Berkeley quantum simulator was used for C-V simulation. (b) I-V curves of the same Ni/SiO2/n-Si MOS capacitors as shown in (a). The marked current is obtained at VG = VFB + 1 V.

Image of FIG. 3.
FIG. 3.

(a) Experimental (dots) and simulated (lines) C-V curves of Ni/SiO2/n-Si MOS capacitors in the contact area and the hanging area after lateral heating in the setting shown in Fig. 1(b) at 1050 °C for 45 s in Helium containing ∼200 ppm O2. Three devices () in the hanging area and three devices () in the contact area were tested for repeatability. Berkeley quantum simulator was used for C-V simulation. (b) I-V curves of the same Ni/SiO2/n-Si MOS capacitors as shown in (a).

Image of FIG. 4.
FIG. 4.

Schematic band structure of a Ni-gate MOS capacitor after high temperature lateral heating processing, where Si structure at the interfacial region is changed due to strain or stress.

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/content/aip/journal/apl/100/17/10.1063/1.4709418
2012-04-27
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Lateral heating of SiO2/Si: Interfacial Si structure change causing tunneling current reduction
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/17/10.1063/1.4709418
10.1063/1.4709418
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