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GaAs/AlGaAs resonant tunneling diodes with a GaInNAs absorption layer for telecommunication light sensing
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10.1063/1.4709421
/content/aip/journal/apl/100/17/10.1063/1.4709421
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/17/10.1063/1.4709421
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Left) Schematic layer sequence of the RTD together with an electron microscopy image of an Au ring contact. The RTDs are based on the GaAs system with highly doped drain and source layers. The DBS consists of 3 nm Al0.6Ga0.4As barriers and a 4 nm GaAs quantum well. The bulk-like GaInNAs absorption layer is grown on top of the DBS with a GaAs spacer layer in between. RTDs mesas with diameters from 12 down to 1 μm have been realized by dry chemical etching and the RTDs are contacted via an Au ring contact to allow illumination of the structure in combination with good contacts. (Right) Schematic valence (VB) and conducting (CB) band profiles under an applied external bias V. Due to the illumination, electron-hole pairs are generated. While the electrons are transferred away from DBS, the holes will accumulate at the DBS.

Image of FIG. 2.
FIG. 2.

Resonance (Ipeak) and valley (Ivalley) currents as a function of the RTD area for the samples with ds = 1 (a), 5 (b), and 10 nm (c). The PVR increases with the thickness of ds caused by a reduction of inelastic scattering via local defects at the DBS. The maximum PVR is 3.83 for ds = 10 nm.

Image of FIG. 3.
FIG. 3.

(a) I(V) characteristics conducted in the dark and under illumination with a laser emitting photons with λ = 1.3 μm and a power density of P = 5.6 μW/μm2 for ds = 5 nm. Under illumination, the I(V) characteristic differ by a threshold voltage shift to lower bias voltages and a maximum output current difference 〈ΔI〉 is found in the bias voltage range V = 3–4 V. (b) Output current differences 〈ΔI〉 versus incident light power for ds = 1, 5, and 10 nm. The maximum of 〈ΔI〉 is decreasing with increasing ds. (c) 〈ΔI〉 as a function of the light power for the sample with ds = 5 nm and load R = 100 Ω. The corresponding sensitivity is S = 966 A/W.

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/content/aip/journal/apl/100/17/10.1063/1.4709421
2012-04-27
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: GaAs/AlGaAs resonant tunneling diodes with a GaInNAs absorption layer for telecommunication light sensing
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/17/10.1063/1.4709421
10.1063/1.4709421
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