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(a) ID-V G curves of as-fabricated a-IGZO TFTs at the different temperatures. (b) The corresponding threshold voltage shift with the different temperatures.
The energy band diagrams of proposed mechanisms for these two distinctive regions: (a) the gate voltage is below VT and (b) the gate voltage is above VT.
(a) I D-V G curves of N2O plasma treatment a-IGZO TFTs at the different temperatures. (b) Schematic passivation layer deposition process of as-fabricated and N2O plasma treatment devices.
Threshold voltage shift under negative gate bias at 400 K with as-fabricated and N2O plasma treatment devices.
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