1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Suppress temperature instability of InGaZnO thin film transistors by N2O plasma treatment, including thermal-induced hole trapping phenomenon under gate bias stress
Rent:
Rent this article for
USD
10.1063/1.4709417
/content/aip/journal/apl/100/18/10.1063/1.4709417
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/18/10.1063/1.4709417
/content/aip/journal/apl/100/18/10.1063/1.4709417
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/apl/100/18/10.1063/1.4709417
2012-05-02
2014-07-29
Loading

Full text loading...

This is a required field
Please enter a valid email address
This feature is disabled while Scitation upgrades its access control system.
This feature is disabled while Scitation upgrades its access control system.
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Suppress temperature instability of InGaZnO thin film transistors by N2O plasma treatment, including thermal-induced hole trapping phenomenon under gate bias stress
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/18/10.1063/1.4709417
10.1063/1.4709417
SEARCH_EXPAND_ITEM