No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
Low-voltage ambipolar polyelectrolyte-gated organic thin film transistors
3. H. L. Kwok and W. C. Li, Appl. Phys. B: Lasers Opt. 1, 1–4 (2011).
12. K.-J. Baeg, D. Khim, D.-Y. Kim, S.-W. Jung, J. B. Koo, I.-K. You, H. Yan, A. Facchetti, and Y.-Y. Noh, J. Polym. Sci. Part B: Polym. Phys. 49, 62 (2011).
16. K. J. Baeg, J. Kim, D. Khim, M. Caironi, D. Y. Kim, I. K. You, J. R. Quinn, A. Facchetti, and Y. Y. Noh, ACS Appl. Mater. Interfaces 3, 3205 (2011).
Article metrics loading...
Organic transistors that use polyelectrolytes as gate insulators can be driven at very low voltages (1 V). The low operating voltage is possible thanks to the formation of electric double layers upon polarization, which generates large electric fields at the critical interfaces in the device structure. In this work, we use a semiconducting blend (of a high electron affinity polymer and a low ionization potential one) in conjunction with a solid polyelectrolyte insulator to fabricate low-voltage ambipolar organic transistors. For both n- and p-channel operation, we use a polycation with readily mobile—yet large enough to limit bulk doping of the semiconductor—counterions.
Full text loading...
Most read this month