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Low-voltage ambipolar polyelectrolyte-gated organic thin film transistors
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1.
1. H. E. Katz and J. Huang, Ann. Rev. Mater. Res. 39, 71 (2009).
http://dx.doi.org/10.1146/annurev-matsci-082908-145433
2.
2. S. R. Forrest, Nature 428, 911 (2004).
http://dx.doi.org/10.1038/nature02498
3.
3. H. L. Kwok and W. C. Li, Appl. Phys. B: Lasers Opt. 1, 14 (2011).
4.
4. S. R. Saudari, Y. J. Lin, Y. Lai, and C. R. Kagan, Adv. Mater. 22, 5063 (2010).
http://dx.doi.org/10.1002/adma.201001853
5.
5. M. J. An, H. S. Seo, Y. Zhang, J. D. Oh, and J. H. Choi, Appl. Phys. Lett. 97, 239901 (2010).
http://dx.doi.org/10.1063/1.3460282
6.
6. J. C. Ribierre, S. Watanabe, M. Matsumoto, T. Muto, D. Hashizume, and T. Aoyama, J. Phys. Chem. C 115, 20703 (2011).
http://dx.doi.org/10.1021/jp206129g
7.
7. R. P. Ortiz, H. Herrera, C. Seoane, J. L. Segura, A. Facchetti, and T. J. Marks, Chem.-Eur. J. 18, 532 (2012).
http://dx.doi.org/10.1002/chem.201101715
8.
8. K. Szendrei, D. Jarzab, Z. Chen, A. Facchetti, and M. A. Loi, J. Mater. Chem. 20, 13171321 (2010).
http://dx.doi.org/10.1039/b919596c
9.
9. J. Veres, S. Ogier, G. Lloyd, and D. de Leeuw, Chem. Mater. 16, 4543 (2004).
http://dx.doi.org/10.1021/cm049598q
10.
10. M. J. Panzer, C. R. Newman, and C. D. Frisbie, Appl. Phys. Lett. 86, 103503 (2005).
http://dx.doi.org/10.1063/1.1880434
11.
11. H. Klauk, U. Zschieschang, J. Pflaum, and M. Halik, Nature 445, 745 (2007).
http://dx.doi.org/10.1038/nature05533
12.
12. K.-J. Baeg, D. Khim, D.-Y. Kim, S.-W. Jung, J. B. Koo, I.-K. You, H. Yan, A. Facchetti, and Y.-Y. Noh, J. Polym. Sci. Part B: Polym. Phys. 49, 62 (2011).
http://dx.doi.org/10.1002/polb.22148
13.
13. L. Herlogsson, X. Crispin, S. Tierney, and M. Berggren, Adv. Mater. 23, 4684 (2011).
http://dx.doi.org/10.1002/adma.201101757
14.
14. H. Yan, Z. Chen, Y. Zheng, C. Newman, J. R. Quinn, F. Dotz, M. Kastler, and A. Facchetti, Nature 457, 679 (2009).
http://dx.doi.org/10.1038/nature07727
15.
15. C. Tengstedt, W. Osikowicz, W. R. Salaneck, I. D. Parker, C. H. Hsu, and M. Fahlman, Appl. Phys. Lett. 88, 1 (2006).
http://dx.doi.org/10.1063/1.2168515
16.
16. K. J. Baeg, J. Kim, D. Khim, M. Caironi, D. Y. Kim, I. K. You, J. R. Quinn, A. Facchetti, and Y. Y. Noh, ACS Appl. Mater. Interfaces 3, 3205 (2011).
http://dx.doi.org/10.1021/am200705j
17.
17. M. Caironi, C. Newman, J. R. Moore, D. Natali, H. Yan, A. Facchetti, and H. Sirringhaus, Appl. Phys. Lett. 96, 183303 (2010).
http://dx.doi.org/10.1063/1.3424792
18.
18. W. Osikowicz, M. P. D. Jong, S. Braun, C. Tengstedt, M. Fahlman, and W. R. Salaneck, Appl. Phys. Lett. 88 (2006).
http://dx.doi.org/10.1063/1.2201627
19.
19. O. Larsson, E. Said, M. Berggren, and X. Crispin, Adv. Funct. Mater. 19, 3334 (2009).
http://dx.doi.org/10.1002/adfm.200900588
20.
20. L. Herlogsson, Y.-Y. Noh, N. Zhao, X. Crispin, H. Sirringhaus, and M. Berggren, Adv. Mater. 20, 4708 (2008).
http://dx.doi.org/10.1002/adma.200801756
21.
21. J. Rivnay, M. F. Toney, Y. Zheng, I. V. Kauvar, Z. Chen, V. Wagner, A. Facchetti, and A. Salleo, Adv. Mater. 22, 4359 (2010).
http://dx.doi.org/10.1002/adma.201001202
22.
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FIG. 1.

(a) Device schematic of the transistor. (b) Chemical structure of the polyelectrolyte. (c) Chemical structure of the semiconductors. (d) Energy levels of the active materials with respect to the work function of (atomically clean) gold.

Image of FIG. 2.

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FIG. 2.

Transfer characteristics of the drain current versus gate voltage at adrain voltage of 0.4 V for positive Vg, and −0.4 V for negative Vg. W/L = 1000/3. Scan speed: 0.12 V/s.

Image of FIG. 3.

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FIG. 3.

(a) n-type output characteristics showing the drain current versus drain voltage for gate voltages between 0.05 V and 0.4 V (Inset presents a zoom for gate voltages between 0.05 V and 0.15 V). (b) p-type output characteristics showing the drain current versus drain voltage for gate voltages between −0.05 V and −0.4 V. Scan speed: 0.12 V/s.

Image of FIG. 4.

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FIG. 4.

Transient measurements that show the drain current’s response to a 1 KHz square-shaped pulse of (+/−)1 V on the gate and (+/−)0.4 V drain-source voltage. The line with symbols (red) represents the n-type response Vd = 0.4 V and Vg = 1 V. The line without symbols (black) represents the p-type response—i.e., Vd = −0.4 V and Vg = −1 V.

Image of FIG. 5.

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FIG. 5.

Electrical characteristics of a complementary-like inverter. The channel length of the transistors is 3 m. The channel width of the pull-up transistor and the pull-down transistor are 15 and 3 mm, respectively.

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/content/aip/journal/apl/100/18/10.1063/1.4709484
2012-04-30
2014-04-21

Abstract

Organic transistors that use polyelectrolytes as gate insulators can be driven at very low voltages (1 V). The low operating voltage is possible thanks to the formation of electric double layers upon polarization, which generates large electric fields at the critical interfaces in the device structure. In this work, we use a semiconducting blend (of a high electron affinity polymer and a low ionization potential one) in conjunction with a solid polyelectrolyte insulator to fabricate low-voltage ambipolar organic transistors. For both n- and p-channel operation, we use a polycation with readily mobile—yet large enough to limit bulk doping of the semiconductor—counterions.

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Scitation: Low-voltage ambipolar polyelectrolyte-gated organic thin film transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/18/10.1063/1.4709484
10.1063/1.4709484
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