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Measurement and simulation of anisotropic magnetoresistance in single GaAs/MnAs core/shell nanowires
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10.1063/1.4710524
/content/aip/journal/apl/100/18/10.1063/1.4710524
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/18/10.1063/1.4710524
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Figures

Image of FIG. 1.
FIG. 1.

(a) Cross-sectional TEM image of a GaAs/MnAs core/shell NW. The GaAs core is in the ZB phase. (b) Single GaAs/MnAs core/shell NW device contacted by four FIB-assisted Pt electrodes, with L = 1.96 μm. (c) GaAs/MnAs core/shell structure used in micromagnetic simulations.

Image of FIG. 2.
FIG. 2.

(a) Resistivity of the device in Fig. 1(b) as a function of the temperature with an excitation current of 0.5 μA. (b) Resistivity vs. temperature (plotted on a log scale). Experimental MR loops with a magnetic field applied (c) parallel and (d) perpendicular to wire axis.

Image of FIG. 3.
FIG. 3.

Simulated magnetic hysteresis curves of GaAs/MnAs core shell nanowires with a ZB core and magnetic fields applied (a) along the wire axis (z) and (b) perpendicular to the wire axis (x). In panel (b), we show hysteresis loops for the magnetization component along the applied field direction x and perpendicular to the wire axis , and along the wire axis . AMR effect extracted from the simulated hysteresis curves for magnetic fields (c) parallel and (d) perpendicular to the wire axis.

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/content/aip/journal/apl/100/18/10.1063/1.4710524
2012-05-01
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Measurement and simulation of anisotropic magnetoresistance in single GaAs/MnAs core/shell nanowires
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/18/10.1063/1.4710524
10.1063/1.4710524
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