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The charge trapping characteristics of Si3N4 and Al2O3 layers on amorphous-indium-gallium-zinc oxide thin films for memory application
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10.1063/1.4711202
/content/aip/journal/apl/100/18/10.1063/1.4711202
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/18/10.1063/1.4711202
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Variation in ΔVt as a function of (a) stress and (b) relaxation time of the charge trap flash samples with the Si3N4 (circle symbol) and Al2O3 (square symbol) charge trap layers. Here, no tunneling SiO2 was used, and the Vgs was maintained at 10 V while the source and drain were grounded. Inset figure in (a) shows the variation of transfer curve with stress time, and inset figure in (b) shows the schematic cross-section of the sample.

Image of FIG. 2.
FIG. 2.

The variation of the transconductance for the given Vds of 0.1 V of (a) the thin film transistors with no charge trap layer (a-IGZO/thermal SiO2), a-IGZO/Al2O3/thermal SiO2, and a-IGZO/Si3N4/thermal SiO2, (b) a-IGZO/Al2O3/thermal SiO2, and (c) a-IGZO/Si3N4/thermal SiO2 samples. In (b) and (c), the Vgs sweeps 10times from −20 V to 20 V. Data from −10 V to 20 V are shown for clarity.

Image of FIG. 3.
FIG. 3.

Trapping and detrapping characteristics of a-IGZO/t-SiO2/Si3N4/thermal SiO2 sample, where (a) 3-nm- and (b) 6-nm-thick t-SiO2 were used under three different programming voltages (10, 15, and 20 V). Inset figure in (b) shows the schematic cross-section of the sample with tunneling SiO2.

Image of FIG. 4.
FIG. 4.

Variation of Gm curves of the samples shown in Fig. 3 with (a) 3-nm-thick t-SiO2 and (b) 6-nm-thick t-SiO2 with a sweep number of up to 10 from −20 V to 20 V. Data from −10 V to 20 V are shown for clarity.

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/content/aip/journal/apl/100/18/10.1063/1.4711202
2012-05-03
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The charge trapping characteristics of Si3N4 and Al2O3 layers on amorphous-indium-gallium-zinc oxide thin films for memory application
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/18/10.1063/1.4711202
10.1063/1.4711202
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