Full text loading...
Variation in ΔVt as a function of (a) stress and (b) relaxation time of the charge trap flash samples with the Si3N4 (circle symbol) and Al2O3 (square symbol) charge trap layers. Here, no tunneling SiO2 was used, and the Vgs was maintained at 10 V while the source and drain were grounded. Inset figure in (a) shows the variation of transfer curve with stress time, and inset figure in (b) shows the schematic cross-section of the sample.
The variation of the transconductance for the given Vds of 0.1 V of (a) the thin film transistors with no charge trap layer (a-IGZO/thermal SiO2), a-IGZO/Al2O3/thermal SiO2, and a-IGZO/Si3N4/thermal SiO2, (b) a-IGZO/Al2O3/thermal SiO2, and (c) a-IGZO/Si3N4/thermal SiO2 samples. In (b) and (c), the Vgs sweeps 10times from −20 V to 20 V. Data from −10 V to 20 V are shown for clarity.
Trapping and detrapping characteristics of a-IGZO/t-SiO2/Si3N4/thermal SiO2 sample, where (a) 3-nm- and (b) 6-nm-thick t-SiO2 were used under three different programming voltages (10, 15, and 20 V). Inset figure in (b) shows the schematic cross-section of the sample with tunneling SiO2.
Variation of Gm curves of the samples shown in Fig. 3 with (a) 3-nm-thick t-SiO2 and (b) 6-nm-thick t-SiO2 with a sweep number of up to 10 from −20 V to 20 V. Data from −10 V to 20 V are shown for clarity.
Article metrics loading...