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Nonvolatile floating gate organic memory device based on pentacene/CdSe quantum dot heterojuction
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FIG. 1.

(a) Schematic diagram of the device architecture with a bottom-gate organic nonvolatile memory device; Atomic force microscope (AFM) image of devices without CdSe QDs (b) and with CdSe QDs (c) on PMMA gate insulator.

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FIG. 2.

C-V characteristics of the fabricated organic memory at different Vbottom sweeping range (a) with CdSe QDs, (b) without CdSe QDs and (b) energy band diagram of memory device.

Image of FIG. 3.

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FIG. 3.

Capacitance change (ΔC) as a function of bottom electrode stress voltage.

Image of FIG. 4.

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FIG. 4.

Retention characteristics after applying −30 V gate stress voltage for 1 s.

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/content/aip/journal/apl/100/18/10.1063/1.4711209
2012-05-03
2014-04-23

Abstract

An organic floating-gate memory device using CdSequantum dots(QDs) as a charge-trapping element was fabricated. CdSeQDs were localized beneath a pentacene without any tunnelinginsulator, and the QD layer played a role as hole-trapping sites. The band bending formed at the junction between pentacene and QD layers inhibited back-injection of holes trapped in CdSe into pentacene, which appeared as a hysteretic capacitance-voltage response during the operation of the device. Nearly, 60% of trapped charge was sustained even after 104 s in programmed state, and this long retention time can be potentially useful in practical applications of non-volatile memory.

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Scitation: Nonvolatile floating gate organic memory device based on pentacene/CdSe quantum dot heterojuction
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/18/10.1063/1.4711209
10.1063/1.4711209
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